| Smart grid technologies J Wang, AQ Huang, W Sung, Y Liu, BJ Baliga IEEE Industrial Electronics Magazine 3 (2), 16-23, 2009 | 278 | 2009 |
| A new edge termination technique for high-voltage devices in 4H-SiC–multiple-floating-zone junction termination extension W Sung, E Van Brunt, BJ Baliga, AQ Huang IEEE Electron Device Letters 32 (7), 880-882, 2011 | 130 | 2011 |
| Method for manufacturing semiconductor device WJ Sung US Patent 7,482,238, 2009 | 123 | 2009 |
| Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme W Sung, BJ Baliga IEEE Electron Device Letters 37 (12), 1605-1608, 2016 | 109 | 2016 |
| On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET) W Sung, BJ Baliga IEEE Transactions on Industrial Electronics 64 (10), 8206-8212, 2017 | 81 | 2017 |
| A near ideal edge termination technique for 4500V 4H-SiC devices: The hybrid junction termination extension W Sung, BJ Baliga IEEE Electron Device Letters 37 (12), 1609-1612, 2016 | 78 | 2016 |
| Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation K Han, BJ Baliga, W Sung IEEE Electron Device Letters 38 (10), 1437-1440, 2017 | 70 | 2017 |
| Area-efficient bevel-edge termination techniques for SiC high-voltage devices W Sung, BJ Baliga, AQ Huang IEEE Transactions on Electron Devices 63 (4), 1630-1636, 2016 | 52 | 2016 |
| A comparative study 4500-V edge termination techniques for SiC devices W Sung, BJ Baliga IEEE Transactions on electron Devices 64 (4), 1647-1652, 2017 | 51 | 2017 |
| Design and investigation of frequency capability of 15kV 4H-SiC IGBT W Sung, J Wang, AQ Huang, BJ Baliga 2009 21st International Symposium on Power Semiconductor Devices & IC's, 271-274, 2009 | 48 | 2009 |
| A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results K Han, BJ Baliga, W Sung IEEE Electron Device Letters 39 (2), 248-251, 2017 | 44 | 2017 |
| Bevel junction termination extension—A new edge termination technique for 4H-SiC high-voltage devices W Sung, AQ Huang, BJ Baliga IEEE Electron Device Letters 36 (6), 594-596, 2015 | 41 | 2015 |
| PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices BJ Baliga, WJ Sung, KJ Han, J Harmon, A Tucker, S Syed Materials Science Forum 924, 523-526, 2018 | 36 | 2018 |
| A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel W Sung, K Han, BJ Baliga 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 33 | 2017 |
| Strategic overview of high-voltage SiC power device development aiming at global energy savings L Cheng, JW Palmour, AK Agarwal, ST Allen, EV Brunt, GY Wang, V Pala, ... Materials Science Forum 778, 1089-1095, 2014 | 31 | 2014 |
| Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 29 | 2021 |
| 10kV SiC MPS diodes for high temperature applications Y Jiang, W Sung, X Song, H Ke, S Liu, BJ Baliga, AQ Huang, E Van Brunt 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 29 | 2016 |
| Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications N Yun, J Lynch, W Sung Applied Physics Letters 114 (19), 2019 | 27 | 2019 |
| Area-efficient, 600V 4H-SiC JBS diode-integrated MOSFETs (JBSFETs) for power converter applications N Yun, J Lynch, W Sung IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 16-23, 2019 | 26 | 2019 |
| A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop W Sung, AQ Huang, BJ Baliga 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 24 | 2010 |
