Robert Schewski
Robert Schewski
Institut für Kristalzüchtung Berlin
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On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
Electrical compensation by Ga vacancies in Ga2O3 thin films
E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
On the nature and temperature dependence of the fundamental band gap of In2O3
K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
Substrate-orientation dependence of β-Ga2O3 (100),(010),(001), and (2¯ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
P Mazzolini, A Falkenstein, C Wouters, R Schewski, T Markurt, Z Galazka, ...
Apl Materials 8 (1), 2020
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen
APL Materials 7 (2), 2019
MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals
Z Galazka, D Klimm, K Irmscher, R Uecker, M Pietsch, R Bertram, ...
physica status solidi (a) 212 (7), 1455-1460, 2015
Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100),(010), and (001)
A Fiedler, R Schewski, Z Galazka, K Irmscher
ECS Journal of Solid State Science and Technology 8 (7), Q3083, 2019
Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy
M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner
Semiconductor Science and Technology 30 (2), 024013, 2015
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