Follow
Zhongming Zeng
Zhongming Zeng
Unknown affiliation
Verified email at sinano.ac.cn
Title
Cited by
Cited by
Year
Flexible all‐solid‐state supercapacitors based on liquid‐exfoliated black‐phosphorus nanoflakes
C Hao, B Yang, F Wen, J Xiang, L Li, W Wang, Z Zeng, B Xu, Z Zhao, Z Liu, ...
Advanced Materials 28 (16), 3194-3201, 2016
3432016
Te-Doped Black Phosphorus Field-Effect Transistors.
B Yang, B Wan, Q Zhou, Y Wang, W Hu, W Lv, Q Chen, Z Zeng, F Wen, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (42), 9408-9415, 2016
2722016
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3 (1), 1426, 2013
2562013
Spin transfer nano-oscillators
Z Zeng, G Finocchio, H Jiang
Nanoscale 5 (6), 2219-2231, 2013
2462013
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
2412011
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
2252011
Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications
C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ...
Advanced Functional Materials 26 (12), 2016-2024, 2016
2012016
Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays
K Wang, JJ Chen, ZM Zeng, J Tarr, WL Zhou, Y Zhang, YF Yan, CS Jiang, ...
Applied Physics Letters 96 (12), 2010
1902010
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 11259, 2016
1832016
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
1522012
Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
Y Xu, X Shi, Y Zhang, H Zhang, Q Zhang, Z Huang, X Xu, J Guo, H Zhang, ...
Nature communications 11 (1), 1330, 2020
1382020
Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
B Wan, B Yang, Y Wang, J Zhang, Z Zeng, Z Liu, W Wang
Nanotechnology 26 (43), 435702, 2015
1202015
The promise of spintronics for unconventional computing
G Finocchio, M Di Ventra, KY Camsari, K Everschor-Sitte, PK Amiri, ...
Journal of Magnetism and Magnetic Materials 521, 167506, 2021
1152021
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 2011
1142011
Sulfur-doped black phosphorus field-effect transistors with enhanced stability
W Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ...
ACS applied materials & interfaces 10 (11), 9663-9668, 2018
1122018
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
A Chen, Y Wen, B Fang, Y Zhao, Q Zhang, Y Chang, P Li, H Wu, H Huang, ...
Nature communications 10 (1), 243, 2019
1112019
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
T Li, G Du, B Zhang, Z Zeng
Applied Physics Letters 105 (9), 2014
1102014
The detection of H2S at room temperature by using individual indium oxide nanowire transistors
Z Zeng, K Wang, Z Zhang, J Chen, W Zhou
Nanotechnology 20 (4), 045503, 2008
1062008
Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction
P Qin, H Yan, X Wang, H Chen, Z Meng, J Dong, M Zhu, J Cai, Z Feng, ...
Nature 613 (7944), 485-489, 2023
1052023
Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
T Li, B Wan, G Du, B Zhang, Z Zeng
Aip Advances 5 (5), 2015
932015
The system can't perform the operation now. Try again later.
Articles 1–20