| Monolithic 4-terminal 1.2 kV/20 A 4H-SiC bi-directional field effect transistor (BiDFET) with integrated JBS diodes K Han, A Agarwal, A Kanale, BJ Baliga, S Bhattacharya, TH Cheng, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 29 | 2020 |
| New short circuit failure mechanism for 1.2 kV 4H-SiC MOSFETs and JBSFETs K Han, A Kanale, BJ Baliga, B Ballard, A Morgan, DC Hopkins 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 27 | 2018 |
| Superior short circuit performance of 1.2 kV SiC JBSFETs compared to 1.2 kV SiC MOSFETs A Kanale, K Han, BJ Baliga, S Bhattacharya Materials Science Forum 963, 797-800, 2019 | 22 | 2019 |
| Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si … A Kanale, BJ Baliga IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics …, 2019 | 16 | 2019 |
| Advanced 650 V SiC power MOSFETs with 10 V gate drive compatible with Si superjunction devices A Agarwal, A Kanale, BJ Baliga IEEE Transactions on Power Electronics 36 (3), 3335-3345, 2020 | 15 | 2020 |
| Enhancing Short Circuit Capability of 1.2 kV SiC Power MOSFETs using a Gate-Source Shorted Si Depletion-Mode MOSFET in Series with the Source A Kanale, BJ Baliga 2019 IEEE 13th International Conference on Power Electronics and Drive …, 2019 | 15 | 2019 |
| Switching and short-circuit performance of 27 nm gate oxide, 650 V SiC planar-gate MOSFETs with 10 to 15 V gate drive voltage A Agarwal, A Kanale, K Han, BJ Baliga 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 13 | 2020 |
| A new user-configurable method to improve short-circuit ruggedness of 1.2-kV SiC power MOSFETs A Kanale, BJ Baliga IEEE Transactions on Power Electronics 36 (2), 2059-2067, 2020 | 13 | 2020 |
| Impact of gate oxide thickness on switching and short circuit performance of 1200 V 4H-SiC inversion-channel MOSFETs A Agarwal, A Kanale, K Han, BJ Baliga, S Bhattacharya 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 12 | 2019 |
| Experimental study of high-temperature switching performance of 1.2 kV SiC JBSFET in comparison with 1.2 kV SiC MOSFET A Kanale, BJ Baliga, K Han, S Bhattacharya Materials Science Forum 963, 625-628, 2019 | 12 | 2019 |
| Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications A Kanale, A Agarwal, BJ Baliga, S Bhattacharya IEEE Transactions on Power Electronics 37 (9), 10112-10116, 2022 | 10 | 2022 |
| Selection methodology for Si power MOSFETs used to enhance SiC power MOSFET short-circuit capability with the BaSIC (EMM) topology A Kanale, BJ Baliga IEEE Transactions on Power Electronics 36 (7), 8243-8252, 2020 | 10 | 2020 |
| Optimized AC/DC dual active bridge converter using monolithic SiC bidirectional FET (BiDFET) for solar PV applications SS Shah, R Narwal, S Bhattacharya, A Kanale, TH Cheng, U Mehrotra, ... 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 568-575, 2021 | 9 | 2021 |
| Packaging development for a 1200V SiC BiDFET switch using highly thermally conductive organic epoxy laminate U Mehrotra, TH Cheng, A Kanale, A Agarwal, K Han, BJ Baliga, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 9 | 2020 |
| Performance evaluation of 3.3 kv sic mosfet and schottky diode for medium voltage current source inverter application S Narasimhan, A Kanale, S Bhattacharya, J Baliga 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 8 | 2021 |
| Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes A Kanale, TH Cheng, SS Shah, K Han, A Agarwal, BJ Baliga, DC Hopkins 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267-1274, 2021 | 8 | 2021 |
| Enhancing short circuit capability of 1.2-kV Si IGBT using a gate-source shorted Si depletion mode MOSFET in series with the emitter A Kanale, BJ Baliga IEEE Transactions on Power Electronics 35 (6), 6350-6361, 2019 | 8 | 2019 |
| Theoretical optimization of the Si GSS-DMM device in the BaSIC topology for SiC power MOSFET short-circuit capability improvement A Kanale, BJ Baliga IEEE Access 9, 70039-70047, 2021 | 7 | 2021 |
| Eliminating repetitive short-circuit degradation and failure of 1.2-kV SiC power MOSFETs A Kanale, BJ Baliga IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (6 …, 2020 | 6 | 2020 |
| 1.2 kV, 10 A, 4H-SiC bi-directional field effect transistor (BiDFET) with low on-state voltage drop A Kanale, TH Cheng, K Han, BJ Baliga, S Bhattacharya, DC Hopkins Materials Science Forum 1004, 872-881, 2020 | 6 | 2020 |
Subhashish BhattacharyaDuke Energy Distinguished Professor, Dept. of ECE, FREEDM Systems Center, NC State UniversityVerified email at ncsu.edu
