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A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation
N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ...
IEEE Electron Device Letters 34 (10), 1313-1315, 2013
1372013
X-ray excited luminescence and local structures in Tb-doped nanocrystals
YL Soo, SW Huang, ZH Ming, YH Kao, GC Smith, E Goldburt, R Hodel, ...
Journal of Applied Physics 83 (10), 5404-5409, 1998
1151998
A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation
N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ...
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013
1042013
Cascode power switch topologies
TR McNutt, JV Reichl, HC Heame III, EJ Stewart, SD Van Campen, ...
US Patent 7,719,055, 2010
1042010
Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker
DP Urciuoli, V Veliadis, HC Ha, V Lubomirsky
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011
902011
Composite nanophosphor screen for detecting radiation
RN Bhargava
US Patent 5,952,665, 1999
761999
A 2055-V (at 0.7 {mA/cm}(2)) 24-A (at 706 {W/cm}(2)) Normally On 4H-SiC JFET With 6.8-{mm}(2) Active Area and Blocking-Voltage Capability Reaching the Material Limit
V Veliadis, M Snook, T McNutt, H Hearne, P Potyraj, A Lelis, C Scozzie
IEEE Electron Device Letters 29 (12), 1325-1327, 2008
552008
Transformation of deep impurities to shallow impurities by quantum confinement
RN Bhargava, V Chhabra, B Kulkarni, JV Veliadis
physica status solidi (b) 210 (2), 621-629, 1998
531998
A 1680-V (at 1 ) 54-A (at 780 ) Normally ON 4H-SiC JFET With 0.143- Active Area
V Veliadis, T McNutt, M Snook, H Hearne, P Potyraj, C Scozzie
IEEE Electron Device Letters 29 (10), 1132-1134, 2008
512008
Controlled agglomeration of Tb-doped nanocrystals studied by x-ray absorption fine structure, x-ray excited luminescence, and photoluminescence
YL Soo, SW Huang, YH Kao, V Chhabra, B Kulkarni, JVD Veliadis, ...
Applied physics letters 75 (16), 2464-2466, 1999
461999
Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
LS Chen, V Veliadis
US Patent 7,372,087, 2008
452008
A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation
V Veliadis, EJ Stewart, H Hearne, M Snook, A Lelis, C Scozzie
IEEE Electron Device Letters 31 (5), 470-472, 2010
372010
Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150
V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ...
IEEE electron device letters 34 (3), 384-386, 2013
352013
Investigation of the suitability of 1200-V normally-off recessed-implanted-gate SiC VJFETs for efficient power-switching applications
V Veliadis, H Hearne, EJ Stewart, HC Ha, M Snook, T McNutt, R Howell, ...
IEEE electron device letters 30 (7), 736-738, 2009
312009
Microchannel high resolution X-ray sensor having an integrated photomultiplier
NR Taskar, JVD Veliadis, V Chhabra, B Kulkarni, N Pandit, RN Bhargava, ...
US Patent 6,452,184, 2002
302002
Composite nanophosphor screen for detecting radiation having optically reflective coatings
RN Bhargava, NR Taskar, V Chhabra, JVD Veliadis
US Patent 6,300,640, 2001
302001
Investigation of the photoluminescence-linewidth broadening in periodic multiple narrow asymmetric coupled quantum wells
JVD Veliadis, JB Khurgin, YJ Ding, AG Cui, DS Katzer
Physical Review B 50 (7), 4463, 1994
301994
Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state circuit breakers
V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 874-879, 2016
292016
600-V/2-A symmetrical bi-directional power flow using vertical-channel JFETs connected in common source configuration
V Veliadis, D Urciuoli, H Hearne, HC Ha, R Howell, C Scozzie
Materials Science Forum 645, 1147-1150, 2010
292010
Silicon carbide JFET cascode switch for power conditioning applications
T McNutt, V Veliadis, E Stewart, H Hearne, J Reichl, P Oda, ...
2005 IEEE Vehicle Power and Propulsion Conference, 499-506, 2005
282005
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