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Robert Kaplar
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
12212018
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
2332004
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
1602016
An AlN/Al0. 85Ga0. 15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
1452016
Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
1312015
Deep levels in p-type InGaAsN lattice matched to GaAs
D Kwon, RJ Kaplar, SA Ringel, AA Allerman, SR Kurtz, ED Jones
Applied physics letters 74 (19), 2830-2832, 1999
1051999
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
972016
Deep levels in p-and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
RJ Kaplar, D Kwon, SA Ringel, AA Allerman, SR Kurtz, ED Jones, ...
Solar energy materials and solar cells 69 (1), 85-91, 2001
782001
Ohmic contacts to Al‐rich AlGaN heterostructures
EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ...
physica status solidi (a) 214 (8), 1600842, 2017
652017
Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
RJ Kaplar, JC Neely, DL Huber, LJ Rashkin
IEEE Power Electronics Magazine 4 (1), 36-42, 2017
642017
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ...
IEEE Electron Device Letters 40 (1), 17-20, 2018
612018
Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs
S DasGupta, M Sun, A Armstrong, RJ Kaplar, MJ Marinella, JB Stanley, ...
IEEE transactions on electron devices 59 (8), 2115-2122, 2012
602012
Ultrawide bandgap semiconductors
M Higashiwaki, R Kaplar, J Pernot, H Zhao
Applied Physics Letters 118 (20), 2021
582021
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
582001
Characterization and reliability of SiC-and GaN-based power transistors for renewable energy applications
RJ Kaplar, MJ Marinella, S DasGupta, MA Smith, S Atcitty, M Sun, ...
2012 IEEE Energytech, 1-6, 2012
572012
Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein, AA Allerman, EA Douglas, RJ Kaplar
Journal of Vacuum Science & Technology A 38 (2), 2020
552020
PV inverter performance and reliability: What is the role of the bus capacitor?
J Flicker, R Kaplar, M Marinella, J Granata
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-3, 2012
552012
Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys
ME Coltrin, AG Baca, RJ Kaplar
ECS Journal of Solid State Science and Technology 6 (11), S3114, 2017
542017
Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
ME Coltrin, RJ Kaplar
Journal of Applied Physics 121 (5), 2017
542017
A derivation of the van der Pauw formula from electrostatics
JD Weiss, RJ Kaplar, KE Kambour
Solid-State Electronics 52 (1), 91-98, 2008
532008
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