Robert Kaplar
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
An AlN/Al0. 85Ga0. 15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
Deep levels in p-type InGaAsN lattice matched to GaAs
D Kwon, RJ Kaplar, SA Ringel, AA Allerman, SR Kurtz, ED Jones
Applied physics letters 74 (19), 2830-2832, 1999
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
Deep levels in p-and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
RJ Kaplar, D Kwon, SA Ringel, AA Allerman, SR Kurtz, ED Jones, ...
Solar energy materials and solar cells 69 (1), 85-91, 2001
Ohmic contacts to Al‐rich AlGaN heterostructures
EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ...
physica status solidi (a) 214 (8), 1600842, 2017
Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
RJ Kaplar, JC Neely, DL Huber, LJ Rashkin
IEEE Power Electronics Magazine 4 (1), 36-42, 2017
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ...
IEEE Electron Device Letters 40 (1), 17-20, 2018
Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs
S DasGupta, M Sun, A Armstrong, RJ Kaplar, MJ Marinella, JB Stanley, ...
IEEE transactions on electron devices 59 (8), 2115-2122, 2012
Ultrawide bandgap semiconductors
M Higashiwaki, R Kaplar, J Pernot, H Zhao
Applied Physics Letters 118 (20), 2021
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
Characterization and reliability of SiC-and GaN-based power transistors for renewable energy applications
RJ Kaplar, MJ Marinella, S DasGupta, MA Smith, S Atcitty, M Sun, ...
2012 IEEE Energytech, 1-6, 2012
Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein, AA Allerman, EA Douglas, RJ Kaplar
Journal of Vacuum Science & Technology A 38 (2), 2020
PV inverter performance and reliability: What is the role of the bus capacitor?
J Flicker, R Kaplar, M Marinella, J Granata
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-3, 2012
Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys
ME Coltrin, AG Baca, RJ Kaplar
ECS Journal of Solid State Science and Technology 6 (11), S3114, 2017
Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
ME Coltrin, RJ Kaplar
Journal of Applied Physics 121 (5), 2017
A derivation of the van der Pauw formula from electrostatics
JD Weiss, RJ Kaplar, KE Kambour
Solid-State Electronics 52 (1), 91-98, 2008
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Articles 1–20