Controlling water intercalation is key to a direct graphene transfer K Verguts, K Schouteden, CH Wu, L Peters, N Vrancken, X Wu, Z Li, ... ACS applied materials & interfaces 9 (42), 37484-37492, 2017 | 56 | 2017 |
Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics Y Shi, B Groven, J Serron, X Wu, A Nalin Mehta, A Minj, S Sergeant, ... ACS nano 15 (6), 9482-9494, 2021 | 34 | 2021 |
Boosting Carrier Mobility of Synthetic Few Layer Graphene on SiO2 by Interlayer Rotation and Decoupling X Wu, Y Chuang, A Contino, B Sorée, S Brems, Z Tokei, M Heyns, ... Advanced Materials Interfaces 5 (14), 1800454, 2018 | 23 | 2018 |
Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel D Lin, X Wu, D Cott, D Verreck, B Groven, S Sergeant, Q Smets, S Sutar, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2020 | 21 | 2020 |
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB Q Smets, T Schram, D Verreck, D Cott, B Groven, Z Ahmed, B Kaczer, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.2. 1-34.2. 4, 2021 | 18 | 2021 |
Sources of variability in scaled MoS2 FETs Q Smets, D Verreck, Y Shi, G Arutchelvan, B Groven, X Wu, S Sutar, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2020 | 16 | 2020 |
Doping of graphene for the application in nano-interconnect X Wu, I Asselberghs, M Politou, A Contino, I Radu, C Huyghebaert, ... Microelectronic Engineering 167, 42-46, 2017 | 14 | 2017 |
Evaluation of multilayer graphene for advanced interconnects M Politou, X Wu, I Asselberghs, A Contino, B Soree, I Radu, ... Microelectronic Engineering 167, 1-5, 2017 | 13 | 2017 |
Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects S Achra, X Wu, V Trepalin, T Nuytten, J Ludwig, V Afanas' ev, S Brems, ... Carbon 183, 999-1011, 2021 | 12 | 2021 |
Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean S Achra, T Akimoto, JF de Marneffe, S Sergeant, X Wu, T Nuytten, ... Applied Surface Science 538, 148046, 2021 | 11 | 2021 |
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg X Wu, D Cott, Z Lin, Y Shi, B Groven, P Morin, D Verreck, Q Smets, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.4. 1-7.4. 4, 2021 | 10 | 2021 |
Scaling synthetic WS2 dual-gate MOS devices towards sub-nm CET D Lin, X Wu, D Cott, B Groven, P Morin, D Verreck, S Sutar, I Asselberghs, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 8 | 2021 |
Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening Y Shi, B Groven, Q Smets, S Sutar, S Banerjee, H Medina, X Wu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2021 | 6 | 2021 |
Graphene-Ruthenium hybrid interconnects S Achra, I Asselberghs, X Wu, S Brems, C Huyghebaert, B Sorée, ... IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium, 2019 | 5 | 2019 |
Modeling of edge scattering in graphene interconnects A Contino, I Ciofi, X Wu, I Asselberghs, U Celano, CJ Wilson, Z Tökei, ... IEEE Electron Device Letters 39 (7), 1085-1088, 2018 | 5 | 2018 |
Characterization of interface interactions between graphene and ruthenium S Achra, X Wu, V Trepalin, T Nuytten, J Ludwig, S Brems, V Afanas’ev, ... 2020 IEEE International Interconnect Technology Conference (IITC), 133-135, 2020 | 4 | 2020 |
Circuit delay and power benchmark of graphene against Cu interconnects A Contino, I Ciofi, R Baert, X Wu, I Asselberghs, U Celano, C Wilson, ... | 4 | 2019 |
ALD encapsulation of CVD WS2 for stable and high-performance FET devices X Wu, D Lin, D Cott, JF De Marneffe, B Groven, S Sergeant, Y Shi, ... 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
Reaction temperature and time dependence of MoCl5 intercalation to few-layer graphene E Ketsombun, X Wu, I Asselberghs, S Achra, C Huyghebaert, D Lin, ... Japanese Journal of Applied Physics 59 (SL), SLLE01, 2020 | 2 | 2020 |
Accurate determination of interlayer resistivity of 2-D layered systems: graphene case study R Nashed, C Pan, X Wu, I Asselberghs, Z Tokei, F Catthoor, A Naeemi IEEE Transactions on Electron Devices 67 (2), 627-632, 2020 | 2 | 2020 |