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Xiangyu Wu
Xiangyu Wu
Verified email at imec.be
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Year
Controlling water intercalation is key to a direct graphene transfer
K Verguts, K Schouteden, CH Wu, L Peters, N Vrancken, X Wu, Z Li, ...
ACS applied materials & interfaces 9 (42), 37484-37492, 2017
562017
Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics
Y Shi, B Groven, J Serron, X Wu, A Nalin Mehta, A Minj, S Sergeant, ...
ACS nano 15 (6), 9482-9494, 2021
342021
Boosting Carrier Mobility of Synthetic Few Layer Graphene on SiO2 by Interlayer Rotation and Decoupling
X Wu, Y Chuang, A Contino, B Sorée, S Brems, Z Tokei, M Heyns, ...
Advanced Materials Interfaces 5 (14), 1800454, 2018
232018
Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel
D Lin, X Wu, D Cott, D Verreck, B Groven, S Sergeant, Q Smets, S Sutar, ...
2020 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2020
212020
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
Q Smets, T Schram, D Verreck, D Cott, B Groven, Z Ahmed, B Kaczer, ...
2021 IEEE International Electron Devices Meeting (IEDM), 34.2. 1-34.2. 4, 2021
182021
Sources of variability in scaled MoS2 FETs
Q Smets, D Verreck, Y Shi, G Arutchelvan, B Groven, X Wu, S Sutar, ...
2020 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2020
162020
Doping of graphene for the application in nano-interconnect
X Wu, I Asselberghs, M Politou, A Contino, I Radu, C Huyghebaert, ...
Microelectronic Engineering 167, 42-46, 2017
142017
Evaluation of multilayer graphene for advanced interconnects
M Politou, X Wu, I Asselberghs, A Contino, B Soree, I Radu, ...
Microelectronic Engineering 167, 1-5, 2017
132017
Metal induced charge transfer doping in graphene-ruthenium hybrid interconnects
S Achra, X Wu, V Trepalin, T Nuytten, J Ludwig, V Afanas' ev, S Brems, ...
Carbon 183, 999-1011, 2021
122021
Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean
S Achra, T Akimoto, JF de Marneffe, S Sergeant, X Wu, T Nuytten, ...
Applied Surface Science 538, 148046, 2021
112021
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg
X Wu, D Cott, Z Lin, Y Shi, B Groven, P Morin, D Verreck, Q Smets, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.4. 1-7.4. 4, 2021
102021
Scaling synthetic WS2 dual-gate MOS devices towards sub-nm CET
D Lin, X Wu, D Cott, B Groven, P Morin, D Verreck, S Sutar, I Asselberghs, ...
2021 Symposium on VLSI Technology, 1-2, 2021
82021
Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening
Y Shi, B Groven, Q Smets, S Sutar, S Banerjee, H Medina, X Wu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2021
62021
Graphene-Ruthenium hybrid interconnects
S Achra, I Asselberghs, X Wu, S Brems, C Huyghebaert, B Sorée, ...
IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium, 2019
52019
Modeling of edge scattering in graphene interconnects
A Contino, I Ciofi, X Wu, I Asselberghs, U Celano, CJ Wilson, Z Tökei, ...
IEEE Electron Device Letters 39 (7), 1085-1088, 2018
52018
Characterization of interface interactions between graphene and ruthenium
S Achra, X Wu, V Trepalin, T Nuytten, J Ludwig, S Brems, V Afanas’ev, ...
2020 IEEE International Interconnect Technology Conference (IITC), 133-135, 2020
42020
Circuit delay and power benchmark of graphene against Cu interconnects
A Contino, I Ciofi, R Baert, X Wu, I Asselberghs, U Celano, C Wilson, ...
42019
ALD encapsulation of CVD WS2 for stable and high-performance FET devices
X Wu, D Lin, D Cott, JF De Marneffe, B Groven, S Sergeant, Y Shi, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
32021
Reaction temperature and time dependence of MoCl5 intercalation to few-layer graphene
E Ketsombun, X Wu, I Asselberghs, S Achra, C Huyghebaert, D Lin, ...
Japanese Journal of Applied Physics 59 (SL), SLLE01, 2020
22020
Accurate determination of interlayer resistivity of 2-D layered systems: graphene case study
R Nashed, C Pan, X Wu, I Asselberghs, Z Tokei, F Catthoor, A Naeemi
IEEE Transactions on Electron Devices 67 (2), 627-632, 2020
22020
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