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Nicholas Antoniou
Nicholas Antoniou
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Title
Cited by
Cited by
Year
Polarization-controlled tunable directional coupling of surface plasmon polaritons
J Lin, JPB Mueller, Q Wang, G Yuan, N Antoniou, XC Yuan, F Capasso
Science 340 (6130), 331-334, 2013
12372013
Nanostructured holograms for broadband manipulation of vector beams
J Lin, P Genevet, MA Kats, N Antoniou, F Capasso
Nano letters 13 (9), 4269-4274, 2013
3032013
Copper device editing: Strategy for focused ion beam milling of copper
JD Casey Jr, M Phaneuf, C Chandler, M Megorden, KE Noll, R Schuman, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
492002
Focused ion beam induced deposition of low-resistivity copper material
TJ Gannon, G Gu, JD Casey, C Huynh, N Bassom, N Antoniou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
222004
In situ FIB-SEM characterization and manipulation methods
N Antoniou, K Rykaczewski, MD Uchic
MRS Bulletin 39 (4), 347-352, 2014
202014
Focused ion beam induced effects on MOS transistor parameters
AN Campbell, P Tangyunyong, JR Jessing, CE Hembree, DM Fleetwood, ...
ISTFA 1999, 273-281, 1999
181999
FIB micro-surgery on flip-chips from the backside
R Lee, N Antoniou
ISTFA 1998, 455-459, 1998
171998
Failure analysis of electronic material using cryogenic FIB-SEM
N Antoniou
EDFA Technical Articles 15 (3), 12-19, 2013
132013
FIB backside isolation techniques
M Abramo, DL Barton, RH Livengood, N Antoniou, KN Hooghan
Microelectronic Failure Analysis: Desk Reference, 1-17, 2001
132001
Development of void-free focused ion beam-assisted metal deposition process for subhalf-micrometer high aspect ratio vias
V Ray, N Antoniou, N Bassom, A Krechmer, A Saxonis
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
112003
Control of localized access to circuitry through the backside using focused ion beam technology
N Antoniou, M Thompson, J Salen, D Casey, RR Goruganthu, R Ring, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
91999
Controlled silicon thinning for design debug of C4 packaged ICs
RR Goruganthu, M Bruce, J Birdsley, V Bruce, G Gilfeather, R Ring, ...
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
91999
Advanced sub 0.13 µm Cu Devices–Failure Analysis and Circuit Edit With Improved FIB Chemical Processes and Beam Characteristics
JD Casey Jr, TJ Gannon, A Krechmer, D Monforte, N Antoniou, N Bassom, ...
International Symposium for Testing and Failure Analysis 30774, 553-557, 2002
82002
Development of a circuit edit process scalable in dimension and material
VV Makarov, N Antoniou
ISTFA 2006, 62-66, 2006
72006
Reliability of bipolar and MOS circuits after FIB modification
R Desplats, JC Courrege, B Benteo, N Antoniou, D Monforte
International Symposium for Testing and Failure Analysis, 289-298, 2001
72001
The Process of Editing Circuits Through the Bulk Silicon
N Antoniou
Microelectronic Failure Analysis Desk Ref. 5th ed., edited by EDFAS, ASM …, 2004
52004
Small via high aspect ratio circuit edit: challenges, techniques and developments
V Ray, N Antoniou, R Balasubramanian, N Bassom, M Clabby, T Gannon, ...
ISTFA 2003, 355-361, 2003
52003
End point of silicon milling using an optical beam induced current signal for controlled access to integrated circuits for backside circuit editing
N Antoniou, NJ Bassom, C Huynh, D Monforte, JD Casey, A Krechmer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
42002
Improvements of Secondary Electron Imaging and Endpoint Detection in Focused Ion Beam Circuit Modification
V Ray, N Antoniou, A Krechmer, A Saxonis
INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 338-342, 2003
32003
Die Backside FIB Preparation for Identification and Characterization of Metal Voids
AN Campbell, WF Filter, N Antoniou
ISTFA 1999, 317-325, 1999
31999
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Articles 1–20