| Band anticrossing in GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Physical Review Letters 82 (6), 1221, 1999 | 2025 | 1999 |
| 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ... Applied Physics Letters 93 (12), 2008 | 630 | 2008 |
| Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration JF Geisz, RM France, KL Schulte, MA Steiner, AG Norman, HL Guthrey, ... Nature energy 5 (4), 326-335, 2020 | 616 | 2020 |
| Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions S Essig, C Allebé, T Remo, JF Geisz, MA Steiner, K Horowitz, L Barraud, ... Nature Energy 2 (9), 1-9, 2017 | 539 | 2017 |
| High-efficiency GaInP∕ GaAs∕ InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ... Applied Physics Letters 91 (2), 2007 | 522 | 2007 |
| 1-eV solar cells with GaInNAs active layer DJ Friedman, JF Geisz, SR Kurtz, JM Olson Journal of Crystal Growth 195 (1-4), 409-415, 1998 | 486 | 1998 |
| Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ... Physical review letters 82 (16), 3312, 1999 | 433 | 1999 |
| III–N–V semiconductors for solar photovoltaic applications JF Geisz, DJ Friedman Semiconductor Science and Technology 17 (8), 769, 2002 | 428 | 2002 |
| Photocurrent of 1 eV GaInNAs lattice-matched to GaAs JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes Journal of Crystal Growth 195 (1-4), 401-408, 1998 | 362 | 1998 |
| Optical enhancement of the open-circuit voltage in high quality GaAs solar cells MA Steiner, JF Geisz, I García, DJ Friedman, A Duda, SR Kurtz Journal of Applied Physics 113 (12), 2013 | 325 | 2013 |
| Large, nitrogen-induced increase of the electron effective mass in C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ... Applied Physics Letters 76 (17), 2409-2411, 2000 | 325 | 2000 |
| Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman Applied Physics Letters 103 (4), 2013 | 322 | 2013 |
| Structural changes during annealing of GaInAsN S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ... Applied Physics Letters 78 (6), 748-750, 2001 | 298 | 2001 |
| Effect of nitrogen on the band structure of GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Journal of applied physics 86 (4), 2349-2351, 1999 | 218 | 1999 |
| Sunlight absorption in water–efficiency and design implications for photoelectrochemical devices H Döscher, JF Geisz, TG Deutsch, JA Turner Energy & Environmental Science 7 (9), 2951-2956, 2014 | 216 | 2014 |
| Building a six-junction inverted metamorphic concentrator solar cell JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ... IEEE Journal of Photovoltaics 8 (2), 626-632, 2017 | 200 | 2017 |
| Band anticrossing in III–N–V alloys W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ... physica status solidi (b) 223 (1), 75-85, 2001 | 170 | 2001 |
| Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency S Essig, MA Steiner, C Allebé, JF Geisz, B Paviet-Salomon, S Ward, ... IEEE Journal of Photovoltaics 6 (4), 1012-1019, 2016 | 153 | 2016 |
| Effect of nitrogen on the electronic band structure of group III-NV alloys W Shan, W Walukiewicz, KM Yu, JW Ager III, EE Haller, JF Geisz, ... Physical Review B 62 (7), 4211, 2000 | 152 | 2000 |
| Multijunction solar cells for conversion of concentrated sunlight to electricity S Kurtz, J Geisz Optics express 18 (101), A73-A78, 2010 | 137 | 2010 |
Daniel J. FriedmanNational Renewable Energy LaboratoryVerificeret mail på nrel.gov
