John Geisz
John Geisz
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Band anticrossing in GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 123505, 2008
High-efficiency triple-junction solar cells grown inverted with a metamorphic bottom junction
JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ...
Applied Physics Letters 91 (2), 023502, 2007
1-eV solar cells with GaInNAs active layer
DJ Friedman, JF Geisz, SR Kurtz, JM Olson
Journal of Crystal Growth 195 (1-4), 409-415, 1998
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
S Essig, C Allebé, T Remo, JF Geisz, MA Steiner, K Horowitz, L Barraud, ...
Nature Energy 2 (9), 1-9, 2017
Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration
JF Geisz, RM France, KL Schulte, MA Steiner, AG Norman, HL Guthrey, ...
Nature energy 5 (4), 326-335, 2020
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
III–N–V semiconductors for solar photovoltaic applications
JF Geisz, DJ Friedman
Semiconductor Science and Technology 17 (8), 769, 2002
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes
Journal of Crystal Growth 195 (1-4), 401-408, 1998
Large, nitrogen-induced increase of the electron effective mass in
C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ...
Applied Physics Letters 76 (17), 2409-2411, 2000
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
MA Steiner, JF Geisz, I García, DJ Friedman, A Duda, SR Kurtz
Journal of Applied Physics 113 (12), 123109, 2013
Structural changes during annealing of GaInAsN
S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ...
Applied Physics Letters 78 (6), 748-750, 2001
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman
Applied Physics Letters 103 (4), 041118, 2013
Effect of nitrogen on the band structure of GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Journal of applied physics 86 (4), 2349-2351, 1999
Sunlight absorption in water–efficiency and design implications for photoelectrochemical devices
H Döscher, JF Geisz, TG Deutsch, JA Turner
Energy & Environmental Science 7 (9), 2951-2956, 2014
Building a six-junction inverted metamorphic concentrator solar cell
JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ...
IEEE Journal of Photovoltaics 8 (2), 626-632, 2017
Band anticrossing in III–N–V alloys
W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ...
physica status solidi (b) 223 (1), 75-85, 2001
Effect of nitrogen on the electronic band structure of group III-NV alloys
W Shan, W Walukiewicz, KM Yu, JW Ager III, EE Haller, JF Geisz, ...
Physical Review B 62 (7), 4211, 2000
Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency
S Essig, MA Steiner, C Allebé, JF Geisz, B Paviet-Salomon, S Ward, ...
IEEE Journal of Photovoltaics 6 (4), 1012-1019, 2016
Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs 1− x N x
Y Zhang, A Mascarenhas, JF Geisz, HP Xin, CW Tu
Physical Review B 63 (8), 085205, 2001
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