| Cyclic growth of strain-relaxed islands FK LeGoues, MC Reuter, J Tersoff, M Hammar, RM Tromp Physical review letters 73 (2), 300, 1994 | 279 | 1994 |
| Transfer-printed stacked nanomembrane lasers on silicon H Yang, D Zhao, S Chuwongin, JH Seo, W Yang, Y Shuai, J Berggren, ... Nature Photonics 6 (9), 615-620, 2012 | 249 | 2012 |
| In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si (001) Ge M Hammar, FK LeGoues, J Tersoff, MC Reuter, RM Tromp Surface science 349 (2), 129-144, 1996 | 196 | 1996 |
| Adsorption of Sn onSi (111) 7× 7: reconstructions in the monolayer regime C Törnevik, M Göthelid, M Hammar, UO Karlsson, NG Nilsson, ... Surface science 314 (2), 179-187, 1994 | 90 | 1994 |
| Large-area InP-based crystalline nanomembrane flexible photodetectors W Yang, H Yang, G Qin, Z Ma, J Berggren, M Hammar, R Soref, W Zhou Applied Physics Letter Vol. 96, page 121107 (2010), 2010 | 82 | 2010 |
| High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers P Sundgren, RM von Würtemberg, J Berggren, M Hammar, M Ghisoni, ... Electronics Letters 39 (15), 1128-1129, 2003 | 72 | 2003 |
| Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells J Misiewicz, R Kudrawiec, K Ryczko, G Sęk, A Forchel, JC Harmand, ... Journal of Physics: Condensed Matter 16 (31), S3071, 2004 | 70 | 2004 |
| Relaxation mechanism of Ge islands/Si (001) at low temperature FK LeGoues, J Tersoff, MC Reuter, M Hammar, R Tromp Applied physics letters 67 (16), 2317-2319, 1995 | 67 | 1995 |
| Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning S Mogg, N Chitica, U Christiansson, R Schatz, P Sundgren, C Asplund, ... IEEE Journal of Quantum Electronics 40 (5), 453-462, 2004 | 64 | 2004 |
| Sm-and Yb-induced reconstructions of the Si (111) surface C Wigren, JN Andersen, R Nyholm, M Göthelid, M Hammar, C Törnevik, ... Physical Review B 48 (15), 11014, 1993 | 56 | 1993 |
| Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 √3 ×2 √3 )R30° reconstructed surface C Törnevik, M Hammar, NG Nilsson, SA Flodström Physical Review B 44 (23), 13144, 1991 | 55* | 1991 |
| In situ TEM study of the growth of Ge on Si (111) FK LeGoues, M Hammar, MC Reuter, RM Tromp Surface science 349 (3), 249-266, 1996 | 52 | 1996 |
| Initial growth of silver on Ge (111) studied by scanning tunneling microscopy M Hammar, M Göthelid, UO Karlsson, SA Flodström Physical Review B 47 (23), 15669, 1993 | 49 | 1993 |
| 1260 nm InGaAs vertical-cavity lasers C Asplund, P Sundgren, S Mogg, M Hammar, U Christiansson, ... Electronics Letters 38 (13), 635-636, 2002 | 47 | 2002 |
| Adatom and rest-atom contributions in Ge (111) c (2× 8) and Ge (111)-Sn (7× 7) core-level spectra M Göthelid, TM Grehk, M Hammar, UO Karlsson, SA Flodström Physical Review B 48 (3), 2012, 1993 | 47 | 1993 |
| Wafer fused heterojunctions F Salomonsson, K Streubel, J Bentell, M Hammar, D Keiper, ... Journal of applied physics 83 (2), 768-774, 1998 | 45 | 1998 |
| Sn-induced surface reconstructions on the Ge (111) surface studied with scanning tunneling microscopy M Göthelid, M Hammar, C Törnevik, UO Karlsson, NG Nilsson, ... Surface science 271 (3), L357-L361, 1992 | 45 | 1992 |
| Printed large-area single-mode photonic crystal bandedge surface-emitting lasers on silicon D Zhao, S Liu, H Yang, Z Ma, C Reuterskiöld-Hedlund, M Hammar, ... Scientific reports 6 (1), 1-6, 2016 | 44 | 2016 |
| Suppression of Higher Order Transverse and Oxide Modes in 1.3-m InGaAs VCSELs by an Inverted Surface Relief E Soderberg, JS Gustavsson, P Modh, A Larsson, Z Zhang, J Berggren, ... IEEE Photonics Technology Letters 19 (5), 327-329, 2007 | 41 | 2007 |
| Electronic and geometric structure of clean Pt 3 Ti (111) W Chen, L Severin, M Göthelid, M Hammar, S Cameron, J Paul Physical Review B 50 (8), 5620, 1994 | 41 | 1994 |
Weidong ZhouUniversity of Texas at ArlingtonBekræftet mail på uta.edu
