| Characteristics of p-type ZnSe layers grown by molecular beam epitaxy with radical doping K Ohkawa, TKT Karasawa, TMT Mitsuyu Japanese journal of applied physics 30 (2A), L152, 1991 | 306 | 1991 |
| Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy K Ohkawa, T Mitsuyu, O Yamazaki Journal of applied physics 62 (8), 3216-3221, 1987 | 227 | 1987 |
| Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth K Ohkawa, T Karasawa, T Mitsuyu Journal of crystal growth 111 (1-4), 797-801, 1991 | 190 | 1991 |
| Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation K Fujii, T Karasawa, K Ohkawa Japanese journal of applied physics 44 (4L), L543, 2005 | 185 | 2005 |
| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 119 | 2020 |
| CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations K Leonardi, H Heinke, K Ohkawa, D Hommel, H Selke, F Gindele, ... Applied physics letters 71 (11), 1510-1512, 1997 | 113 | 1997 |
| Photoelectrochemical properties of p-type GaN in comparison with n-type GaN K Fujii, K Ohkawa Japanese journal of applied physics 44 (7L), L909, 2005 | 108 | 2005 |
| Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study A Hirako, K Kusakabe, K Ohkawa Japanese journal of applied physics 44 (2R), 874, 2005 | 104 | 2005 |
| Molecular-beam epitaxial growth of p-and n-type ZnSe homoepitaxial layers K Ohkawa, A Ueno, T Mitsuyu Journal of crystal growth 117 (1-4), 375-384, 1992 | 102 | 1992 |
| Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN M Ono, K Fujii, T Ito, Y Iwaki, A Hirako, T Yao, K Ohkawa The Journal of chemical physics 126 (5), 2007 | 96 | 2007 |
| Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers K Ohkawa, T Mitsuyu, O Yamazaki Physical Review B 38 (17), 12465, 1988 | 94 | 1988 |
| 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE K Ohkawa, T Watanabe, M Sakamoto, A Hirako, M Deura Journal of crystal growth 343 (1), 13-16, 2012 | 93 | 2012 |
| Photoelectrochemical properties of InGaN for H2 generation from aqueous water K Fujii, K Kusakabe, K Ohkawa Japanese journal of applied physics 44 (10R), 7433, 2005 | 91 | 2005 |
| Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping T Mitsuyu, K Ohkawa, O Yamazaki Applied physics letters 49 (20), 1348-1350, 1986 | 81 | 1986 |
| CdSe/ZnSe quantum dot structures: structural and optical investigations D Hommel, K Leonardi, H Heinke, H Selke, K Ohkawa, F Gindele, ... physica status solidi (b) 202 (2), 835-843, 1997 | 76 | 1997 |
| Demonstration of low forward voltage InGaN-based red LEDs D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied Physics Express 13 (3), 031001, 2020 | 71 | 2020 |
| Photo-induced CO2 reduction with GaN electrode in aqueous system S Yotsuhashi, M Deguchi, Y Zenitani, R Hinogami, H Hashiba, Y Yamada, ... Applied Physics Express 4 (11), 117101, 2011 | 70 | 2011 |
| High stability and efficiency of GaN photocatalyst for hydrogen generation from water T Hayashi, M Deura, K Ohkawa Japanese Journal of Applied Physics 51 (11R), 112601, 2012 | 67 | 2012 |
| Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure D Iida, K Niwa, S Kamiyama, K Ohkawa Applied Physics Express 9 (11), 111003, 2016 | 66 | 2016 |
| Plasma etching treatment for surface modification of boron-doped diamond electrodes T Kondo, H Ito, K Kusakabe, K Ohkawa, Y Einaga, A Fujishima, T Kawai Electrochimica acta 52 (11), 3841-3848, 2007 | 66 | 2007 |
Daisuke IidaKing Abdullah University of Science and Technology (KAUST)Verificeret mail på kaust.edu.sa
