Eilam Yalon
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Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano letters 17 (6), 3429-3433, 2017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng
Nano letters 17 (6), 3854-3861, 2017
High Current Density in Monolayer MoS2 Doped by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
ACS nano 15 (1), 1587-1596, 2021
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ...
Science advances 5 (8), eaax1325, 2019
Uncovering the Effects of Metal Contacts on Monolayer MoS2
K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ...
ACS nano 14 (11), 14798-14808, 2020
Engineering field effect transistors with 2D semiconducting channels: status and prospects
X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza
Advanced Functional Materials 30 (18), 1901971, 2020
Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy
KKH Smithe, AV Krayev, CS Bailey, HR Lee, E Yalon, B Aslan, ...
ACS Applied Nano Materials 1 (2), 572-579, 2017
Spatially resolved thermometry of resistive memory devices
E Yalon, S Deshmukh, M Muñoz Rojo, F Lian, CM Neumann, F Xiong, ...
Scientific reports 7 (1), 15360, 2017
Effective n-type doping of monolayer MoS2 by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th annual device research conference (DRC), 1-2, 2017
Localized Heating and Switching in MoTe2-Based Resistive Memory Devices
IM Datye, MM Rojo, E Yalon, S Deshmukh, MJ Mleczko, E Pop
Nano letters 20 (2), 1461-1467, 2020
Detection of the insulating gap and conductive filament growth direction in resistive memories
E Yalon, I Karpov, V Karpov, I Riess, D Kalaev, D Ritter
Nanoscale 7 (37), 15434-15441, 2015
Radiofrequency switches based on emerging resistive memory technologies-a survey
N Wainstein, G Adam, E Yalon, S Kvatinsky
Proceedings of the IEEE 109 (1), 77-95, 2020
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop
Applied Physics Letters 114 (8), 2019
Thermometry of filamentary RRAM devices
E Yalon, AA Sharma, M Skowronski, JA Bain, D Ritter, IV Karpov
IEEE Transactions on Electron Devices 62 (9), 2972-2977, 2015
Resistive Switching inProbed by a Metal–Insulator–Semiconductor Bipolar Transistor
E Yalon, A Gavrilov, S Cohen, D Mistele, B Meyler, J Salzman, D Ritter
IEEE electron device letters 33 (1), 11-13, 2011
Understanding the switching mechanism of interfacial phase change memory
KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ...
Journal of Applied Physics 125 (18), 2019
Monolayer molybdenum disulfide switches for 6G communication systems
M Kim, G Ducournau, S Skrzypczak, SJ Yang, P Szriftgiser, N Wainstein, ...
Nature Electronics 5 (6), 367-373, 2022
Towards ultimate scaling limits of phase-change memory
F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016
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