| SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations S Choi, SH Tan, Z Li, Y Kim, C Choi, PY Chen, H Yeon, S Yu, J Kim Nature materials 17 (4), 335-340, 2018 | 643 | 2018 |
| Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340–343, 2017 | 570 | 2017 |
| High efficiency Cu 2 ZnSn (S, Se) 4 solar cells by applying a double In 2 S 3/CdS emitter J Kim, H Hiroi, TK Todorov, O Gunawan, M Kuwahara, T Gokmen, D Nair, ... Adv. Mater 26 (44), 7427-7431, 2014 | 514 | 2014 |
| Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ... Nature communications 5 (1), 4836, 2014 | 430 | 2014 |
| Path towards graphene commercialization from lab to market W Kong, H Kum, SH Bae, J Shim, H Kim, L Kong, Y Meng, K Wang, C Kim, ... Nature nanotechnology 14 (10), 927-938, 2019 | 361 | 2019 |
| Building energy performance evaluation of building integrated photovoltaic (BIPV) window with semi-transparent solar cells YT Chae, J Kim, H Park, B Shin Applied Energy 129, 217-227, 2014 | 315 | 2014 |
| Heterogeneous integration of single-crystalline complex-oxide membranes HS Kum, H Lee, S Kim, S Lindemann, W Kong, K Qiao, P Chen, J Irwin, ... Nature 578 (7793), 75-81, 2020 | 314 | 2020 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 310 | 2018 |
| Integration of bulk materials with two-dimensional materials for physical coupling and applications SH Bae, H Kum, W Kong, Y Kim, C Choi, B Lee, P Lin, Y Park, J Kim Nature materials 18 (6), 550-560, 2019 | 293 | 2019 |
| Layer-resolved graphene transfer via engineered strain layers J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ... Science 342 (6160), 833-836, 2013 | 269 | 2013 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 249 | 2018 |
| Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices H Kum, D Lee, W Kong, H Kim, Y Park, Y Kim, Y Baek, SH Bae, K Lee, ... Nature Electronics 2 (10), 439-450, 2019 | 243 | 2019 |
| Alloying conducting channels for reliable neuromorphic computing H Yeon, P Lin, C Choi, SH Tan, Y Park, D Lee, J Lee, F Xu, B Gao, H Wu, ... Nature Nanotechnology 15 (7), 574-579, 2020 | 234 | 2020 |
| Low cost soi substrates for monolithic solar cells SW Bedell, JP De Souza, KE Fogel, HJ Hovel, DA Inns, J Kim, DK Sadana, ... US Patent App. 12/436,249, 2010 | 197 | 2010 |
| Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum TJ Lu, M Fanto, H Choi, P Thomas, J Steidle, S Mouradian, W Kong, ... Optics express 26 (9), 11147-11160, 2018 | 173 | 2018 |
| Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors Y Kim, JM Suh, J Shin, Y Liu, H Yeon, K Qiao, HS Kum, C Kim, HE Lee, ... Science 377 (6608), 859-864, 2022 | 167 | 2022 |
| Vertical full-colour micro-LEDs via 2D materials-based layer transfer J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ... Nature 614 (7946), 81-87, 2023 | 161 | 2023 |
| Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides A Aljarb, JH Fu, CC Hsu, CP Chuu, Y Wan, M Hakami, DR Naphade, ... Nature Materials 19 (12), 1300-1306, 2020 | 139 | 2020 |
| Long-term reliable physical health monitoring by sweat pore–inspired perforated electronic skins H Yeon, H Lee, Y Kim, D Lee, Y Lee, JS Lee, J Shin, C Choi, JH Kang, ... Science Advances 7 (27), eabg8459, 2021 | 122 | 2021 |
| N-type carrier enhancement in semiconductors JH Kim, SW Bedell, S Maurer, DK Sadana US Patent 8,178,430, 2012 | 120 | 2012 |
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