Shane R Johnson
Citeret af
Citeret af
The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
SK O’Leary, SR Johnson, PK Lim
Journal of applied physics 82 (7), 3334-3340, 1997
Temperature dependence of the Urbach edge in GaAs
SR Johnson, T Tiedje
Journal of applied physics 78 (9), 5609-5613, 1995
High Power Vcsels With Transverse Mode Control
N Samal, S Johnson, YH Zhang
US Patent App. 10/592,999, 2007
Optical absorption edge of semi-insulating GaAs and InP at high temperatures
M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje
Applied Physics Letters 70 (26), 3540-3542, 1997
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice
M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ...
Applied physics letters 70 (11), 1438-1440, 1997
Clustering effects in Ga (AsBi)
S Imhof, A Thränhardt, A Chernikov, M Koch, NS Köster, K Kolata, ...
Applied Physics Letters 96 (13), 2010
Photonic band structure of dielectric membranes periodically textured in two dimensions
V Pacradouni, WJ Mandeville, AR Cowan, P Paddon, JF Young, ...
Physical Review B 62 (7), 4204, 2000
Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
SR Johnson, C Lavoie, MK Nissen, JT Tiedje
US Patent 5,388,909, 1995
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
SR Johnson, C Lavoie, T Tiedje, JA Mackenzie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Journal of Applied Physics 118 (24), 2015
Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
YG Sadofyev, A Ramamoorthy, B Naser, JP Bird, SR Johnson, YH Zhang
Applied physics letters 81 (10), 1833-1835, 2002
A semi-analytical model for semiconductor solar cells
D Ding, SR Johnson, SQ Yu, SN Wu, YH Zhang
Journal of Applied Physics 110 (12), 2011
Band edge alignment of pseudomorphic on GaAs
JB Wang, SR Johnson, SA Chaparro, D Ding, Y Cao, YG Sadofyev, ...
Physical Review B 70 (19), 195339, 2004
GaAsSb/GaAs band alignment evaluation for long-wave photonic applications
SR Johnson, CZ Guo, S Chaparro, YG Sadofyev, J Wang, Y Cao, ...
Journal of crystal growth 251 (1-4), 521-525, 2003
Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications
P Dowd, SR Johnson, SA Feld, M Adamcyk, SA Chaparro, J Joseph, ...
Electronics Letters 39 (13), 1, 2003
Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
P Dowd, W Braun, DJ Smith, CM Ryu, CZ Guo, SL Chen, U Koelle, ...
Applied physics letters 75 (9), 1267-1269, 1999
Disorder and the Urbach edge in dilute bismide GaAsBi
C Gogineni, NA Riordan, SR Johnson, X Lu, T Tiedje
Applied Physics Letters 103 (4), 2013
Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
R Leon, S Chaparro, SR Johnson, C Navarro, X Jin, YH Zhang, J Siegert, ...
Journal of applied physics 91 (9), 5826-5830, 2002
Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ...
Journal of Applied Physics 119 (22), 2016
The variable stripe-length method revisited: Improved analysis
C Lange, M Schwalm, S Chatterjee, WW Rühle, NC Gerhardt, ...
Applied Physics Letters 91 (19), 2007
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