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Ulrich Klostermann
Ulrich Klostermann
CAE Manager, Synopsys
Bekræftet mail på synopsys.com
Titel
Citeret af
Citeret af
År
Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells
D Braun, U Klostermann
US Patent App. 10/982,026, 2006
1162006
Condensed memory cell structure using a FinFET
H Park, U Klostermann, R Leuschner
US Patent 8,665,629, 2014
882014
Integrated circuit
D Andres, R Bruchhaus, U Gruening-Von Schwerin, U Klostermann, ...
US Patent 8,063,394, 2011
812011
Magnetic tunnel junctions for MRAM devices
SL Brown, A Gupta, U Klostermann, SSP Parkin, W Raberg, M Samant
US Patent 7,149,105, 2006
602006
Integrated circuits; methods for manufacturing an integrated circuit and memory module
U Klostermann
US Patent 7,838,861, 2010
572010
Electric device protection circuit and method for protecting an electric device
A Duch, U Klostermann, M Kund
US Patent 7,751,163, 2010
572010
MRAM with magnetic via for storage of information and field sensor
D Braun, R Leuschner, U Klostermann
US Patent 7,092,284, 2006
552006
Field programmable spin-logic based on magnetic tunnelling elements
R Richter, H Boeve, L Bär, J Bangert, UK Klostermann, J Wecker, G Reiss
Journal of magnetism and magnetic materials 240 (1-3), 127-129, 2002
432002
A perpendicular spin torque switching based MRAM for the 28 nm technology node
UK Klostermann, M Angerbauer, U Gruning, F Kreupl, M Ruhrig, ...
2007 IEEE International Electron Devices Meeting, 187-190, 2007
362007
Integrated circuit, method of manufacturing an integrated circuit, and memory module
U Klostermann, R Leuschner
US Patent 7,855,435, 2010
332010
Magnetic tunnel junction cap structure and method for forming the same
SK Kanakasabapathy, DW Abraham, U Klostermann
US Patent 7,112,861, 2006
322006
MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
R Leuschner, U Klostermann, R Ferrant
US Patent 8,310,866, 2012
292012
Calibration and verification of a stochastic model for EUV resist
W Gao, A Philippou, U Klostermann, J Siebert, V Philipsen, E Hendrickx, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 421-430, 2012
292012
Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module
R Leuschner, U Klostermann
US Patent 7,697,322, 2010
292010
Calibration of physical resist models: methods, usability, and predictive power
UK Klostermann, T Mülders, D Ponomarenco, T Schmöller, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 8 (3), 033005, 2009
272009
A 0.18/spl mu/m logic-based MRAM technology for high performance nonvolatile memory applications
AR Sitaram, DW Abraham, C Alof, D Braun, S Brown, G Costrini, F Findeis, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
252003
Vortex penetration depth of κ-(ET) 2Cu [N (CN) 2] Br
NH Tea, FAB Chaves, U Klostermann, R Giannetta, MB Salamon, ...
Physica C: Superconductivity 280 (4), 281-288, 1997
221997
Integrated circuit having a magnetic tunnel junction device and method
U Klostermann, F Kreupl
US Patent 7,902,616, 2011
212011
Magnetoresistive sensor with tunnel barrier and method
F Kreupl, U Klostermann
US Patent 7,863,700, 2011
192011
Magnetoresistive sensor element for sensing a magnetic field
J Zimmer, U Klostermann, C Alof
US Patent 7,495,434, 2009
192009
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Artikler 1–20