Vibhor Jain
Vibhor Jain
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InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz
M Seo, M Urteaga, J Hacker, A Young, Z Griffith, V Jain, R Pierson, ...
Solid-State Circuits, IEEE Journal of 46 (10), 2203-2214, 2011
130nm InP DHBTs with ft >0.52THz and fmax>1.1THz
M Urteaga, R Pierson, P Rowell, V Jain, E Lobisser, MJW Rodwell
69th Device Research Conference, 281-282, 2011
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
JJ Pekarik, J Adkisson, P Gray, Q Liu, R Camillo-Castillo, M Khater, V Jain, ...
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 92-95, 2014
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth
JC Rode, HW Chiang, P Choudhary, V Jain, BJ Thibeault, WJ Mitchell, ...
IEEE Transactions on Electron Devices 62 (9), 2779-2785, 2015
> 300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process
M Seo, M Urteaga, A Young, V Jain, Z Griffith, J Hacker, P Rowell, ...
2010 IEEE MTT-S International Microwave Symposium, 272-275, 2010
InP HBTs for THz frequency integrated circuits
M Urteaga, M Seo, J Hacker, Z Griffith, A Young, R Pierson, P Rowell, ...
IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011
Ex situ Ohmic contacts to n-InGaAs
A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010
1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
V Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ...
69th Device Research Conference, 271-272, 2011
200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax≫ 800 GHz and ƒτ= 360 GHz
E Lobisser, Z Griffith, V Jain, BJ Thibeault, MJW Rodwell, D Loubychev, ...
2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009
Photovoltaic effect in single-layer organic solar cell devices fabricated with two new imidazolin-5-one molecules
V Jain, BK Rajbongshi, AT Mallajosyula, G Bhattacharjya, SSK Iyer, ...
Solar Energy Materials and Solar Cells 92 (9), 1043-1046, 2008
Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends
J Hoffman, JR Martin-Gosse, S Shopov, JJ Pekarik, R Camillo-Castillo, ...
IEEE Journal of Solid-State Circuits 51 (9), 1985-1993, 2016
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $ f_ {tau}/f_ {max} sim hbox {430/800} hbox {GHz} $
V Jain, E Lobisser, A Baraskar, BJ Thibeault, MJW Rodwell, Z Griffith, ...
Electron Device Letters, IEEE 32 (1), 24-26, 2011
A comparison between bipolar transistor and nanowire field effect transistor biosensors
S Zafar, M Khater, V Jain, T Ning
Applied Physics Letters 106 (6), 2015
Total dose and transient response of SiGe HBTs from a new 4th-generation, 90 nm SiGe BiCMOS technology
NE Lourenco, RL Schmid, KA Moen, SD Phillips, TD England, ...
2012 IEEE Radiation Effects Data Workshop, 1-5, 2012
A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz
P Candra, V Jain, P Cheng, J Pekarik, R Camillo-Castillo, P Gray, ...
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 381-384, 2013
High doping effects on in-situ Ohmic contacts to n-InAs
A Baraskar, V Jain, MA Wistey, U Singisetti, YJ Lee, B Thibeault, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
QZ Liu, JW Adkisson, V Jain, RA Camillo-Castillo, MH Khater, PB Gray, ...
ECS transactions 64 (6), 285, 2014
Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS
A Joseph, V Jain, SN Ong, R Wolf, SF Lim, J Singh
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics
RA Camillo-Castillo, QZ Liu, JW Adkisson, MH Khater, PB Gray, V Jain, ...
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 227-230, 2013
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