| Advanced methodology for fast 3-D TCAD device/circuit electrothermal simulation and analysis of power HEMTs A Chvála, D Donoval, A Šatka, M Molnár, J Marek, P Príbytný IEEE Transactions on Electron Devices 62 (3), 828-834, 2015 | 44 | 2015 |
| Fast 3-D electrothermal device/circuit simulation of power superjunction MOSFET based on SDevice and HSPICE interaction A Chvála, D Donoval, J Marek, P Príbytný, M Molnár, M Mikolášek IEEE Transactions on Electron Devices 61 (4), 1116-1122, 2014 | 28 | 2014 |
| Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations J Marek, A Chvála, D Donoval, P Príbytný, M Molnár, M Mikolášek Solid-State Electronics 94, 44-50, 2014 | 27 | 2014 |
| Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour D Donoval, A Vrbicky, J Marek, A Chvala, P Beno Solid-state electronics 52 (6), 892-898, 2008 | 27 | 2008 |
| Effective 3-D device electrothermal simulation analysis of influence of metallization geometry on multifinger power HEMTs properties A Chvála, J Marek, P Príbytný, A Šatka, M Donoval, D Donoval IEEE Transactions on Electron Devices 64 (1), 333-336, 2016 | 23 | 2016 |
| Simulation study of interface traps and bulk traps in n++ GaN/InAlN/AlN/GaN high electron mobility transistors M Molnar, D Donoval, J Kuzmík, J Marek, A Chvála, P Príbytný, ... Applied surface science 312, 157-161, 2014 | 23 | 2014 |
| Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation A Chvála, J Marek, P Príbytný, A Šatka, S Stoffels, N Posthuma, ... Microelectronics Reliability 78, 148-155, 2017 | 20 | 2017 |
| Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator R Stoklas, D Gregušová, K Hušeková, J Marek, P Kordoš Semiconductor Science and Technology 29 (4), 045003, 2014 | 20 | 2014 |
| Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells M Mikolášek, P Príbytný, D Donoval, J Marek, A Chvála, M Molnár, ... Applied surface science 312, 145-151, 2014 | 16 | 2014 |
| Technology of integrated self-aligned E/D-mode n++ GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics M Blaho, D Gregušová, Š Haščík, A Seifertová, M Ťapajna, J Šoltýs, ... Semiconductor Science and Technology 31 (6), 065011, 2016 | 15 | 2016 |
| Advanced characterization techniques and analysis of thermal properties of AlGaN/GaN multifinger power HEMTs on SiC substrate supported by three-dimensional simulation A Chvála, R Szobolovszký, J Kováč, M Florovič, J Marek, Ľ Černaj, ... Journal of Electronic Packaging 141 (3), 031007, 2019 | 12 | 2019 |
| Power P-GaN HEMT under single and multi-pulse UIS conditions J Kozárik, J Marek, M Jagelka, L Černaj, A Chvala, D Donoval 2018 12th International Conference on Advanced Semiconductor Devices and …, 2018 | 12 | 2018 |
| Impact of repetitive UIS on modern GaN power devices J Marek, Ľ Stuchlíková, M Jagelka, A Chvála, P Príbytný, M Donoval, ... 2016 11th International Conference on Advanced Semiconductor Devices …, 2016 | 12 | 2016 |
| Analysis of novel MagFET structures for built-in current sensors supported by 3D modeling and simulation J Marek, D Donoval, M Donoval, M Dařĺček 2008 International Conference on Advanced Semiconductor Devices and …, 2008 | 11 | 2008 |
| Characterization and evaluation of current transport properties of power SiC Schottky diode A Chvála, J Marek, J Drobný, Ľ Stuchlíková, AA Messina, V Vinciguerra, ... Materials Today: Proceedings 53, 285-288, 2022 | 10 | 2022 |
| Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation A Chvala, D Donoval, J Marek, P Pribytný, M Molnar 2012 28th International Conference on Microelectronics Proceedings, 255-258, 2012 | 10 | 2012 |
| Power p-GaN HEMT under unclamped inductive switching conditions J Marek, A Satka, M Jagelka, A Chvala, P Pribytny, M Donoval, D Donoval PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 9 | 2018 |
| Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure P Šichman, S Hasenöhrl, R Stoklas, J Priesol, E Dobročka, Š Haščík, ... Materials Science in Semiconductor Processing 118, 105203, 2020 | 8 | 2020 |
| Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations A Chvála, L Nagy, J Marek, J Priesol, D Donoval, M Blaho, D Gregušová, ... IEEE Transactions on Electron Devices 65 (6), 2666-2669, 2018 | 8 | 2018 |
| Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation A Chvála, D Donoval, P Beno, J Marek, P Pribytny, M Molnar Microelectronics Reliability 52 (6), 1031-1038, 2012 | 6 | 2012 |
