Young-Chang Kim
Young-Chang Kim
Senior Technical Marketing Engineer, Mentor Graphics
Bekræftet mail på mentor.com
Citeret af
Citeret af
Automatic in-situ focus monitor using line-shortening effect
YC Kim, G Yeo, JH Lee, H Kim, UI Chung
Metrology, Inspection, and Process Control for Microlithography XIII 3677 …, 1999
ArF lithography options for 100-nm technologies
G Vandenberghe, YC Kim, C Delvaux, KD Lucas, SJ Choi, M Ercken, ...
Optical Microlithography XIV 4346, 179-190, 2001
Focus test mask for projection exposure system, focus monitoring system using the same, and focus monitoring method
YC Kim
US Patent 6,088,113, 2000
Pinusolide and 15‐methoxypinusolidic acid attenuate the neurotoxic effect of staurosporine in primary cultures of rat cortical cells
KA Koo, MK Lee, SH Kim, EJ Jeong, SY Kim, TH Oh, YC Kim
British journal of pharmacology 150 (1), 65-71, 2007
Evaluation of stray light and quantitative analysis of its impact on lithography
YC Kim, P De Bisschop, G Vandenberghe
Journal of Micro/Nanolithography, MEMS, and MOEMS 4 (4), 043002, 2005
Alignment mark of semiconductor wafer for use in aligning the wafer with exposure equipment, alignment system for producing alignment signals from the alignment mark, and …
YC Kim, H Ryuk, Y Han
US Patent 6,501,189, 2002
OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect
YC Kim, I Kim, JG Park, S Kim, S Suh, Y Cheon, S Lee, J Lee, CJ Kang, ...
Optical Microlithography XX 6520, 338-349, 2007
Retarget process modeling method, method of fabricating mask using the retarget process modeling method, computer readable storage medium, and imaging system
YM Lee, YC Kim, SS Suh
US Patent App. 12/974,681, 2011
Semiconductor wafer bearing alignment mark for use in aligning the wafer with exposure equipment, alignment system for producing alignment signals from the alignment mark, and …
YC Kim, H Ryuk, Y Han
US Patent 7,038,777, 2006
A methodology for the characterization of topography induced immersion bubble defects
M Kocsis, P De Bisschop, M Maenhoudt, YC Kim, G Wells, S Light, ...
Optical Microlithography XVIII 5754, 154-163, 2005
Reduction of systematic defects with machine learning from design to fab
Y Ma, L Hong, J Word, F Jiang, V Liubich, L Cao, S Jayaram, D Kwak, ...
Advanced Etch Technology for Nanopatterning IX 11329, 12-25, 2020
Characterization of stray light of ArF lithographic tools: modeling of power spectral density of an optical pupil
YC Kim, P De Bisschop, G Vandenberghe
Microelectronic engineering 83 (4-9), 643-646, 2006
Physical simulation for verification and OPC on full chip level
S Shim, S Moon, Y Kim, S Choi, Y Kim, B Küchler, U Klostermann, M Do, ...
Optical Microlithography XXIV 7973, 847-855, 2011
Predictable etch model using machine learning
Y Kim, S Jung, DH Kwak, V Liubich, G Fenger
Optical Microlithography XXXII 10961, 14-24, 2019
OPC to account for thick mask effect using simplified boundary layer model
S Kim, YC Kim, S Suh, S Lee, S Lee, S Lee, H Cho, J Moon, J Cobb, ...
Photomask Technology 2006 6349, 1033-1040, 2006
Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
YC Kim, G Vandenberghe, S Verhaegen, KG Ronse
21st Annual BACUS Symposium on Photomask Technology 4562, 954-967, 2002
Investigation of EUV tapeout flow issues, requirements, and options for volume manufacturing
J Cobb, S Jang, J Ser, I Kim, J Yeap, K Lucas, M Do, YC Kim
Extreme Ultraviolet (EUV) Lithography II 7969, 250-261, 2011
Method of reducing the impact of stray light during optical lithography, devices obtained thereof and masks used therewith
P Leunissen, YC Kim
US Patent 7,838,209, 2010
Stray-light implementation in optical proximity correction (OPC)
YC Kim, D Kim, I Kim, S Kim, S Suh, YJ Chun, S Lee, J Lee, CJ Kang, ...
Photomask and Next-Generation Lithography Mask Technology XIV 6607, 487-496, 2007
Three-dimensional mask effect approximate modeling for sub-50-nm node device OPC
S Suh, SJ Lee, K Back, S Lee, Y Kim, S Kim, YJ Chun
Design for Manufacturability through Design-Process Integration 6521, 35-42, 2007
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