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Nick Baker
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ZigBee and Bluetooth: Strengths and weaknesses for industrial applications
N Baker
Computing and Control Engineering 16 (2), 20-25, 2005
5032005
Improved reliability of power modules: A review of online junction temperature measurement methods
N Baker, M Liserre, L Dupont, Y Avenas
IEEE Industrial Electronics Magazine 8 (3), 17-27, 2014
2372014
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2015
1452015
Condition monitoring: A decade of proposed techniques
Y Avenas, L Dupont, N Baker, H Zara, F Barruel
IEEE Industrial Electronics Magazine 9 (4), 22-36, 2015
1162015
IR camera validation of IGBT junction temperature measurement via peak gate current
N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2016
1022016
Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters
N Baker, M Liserre, L Dupont, Y Avenas
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013
672013
Online junction temperature measurement via internal gate resistance during turn-on
N Baker, S Munk-Nielsen, M Liserre, F Iannuzzo
2014 16th European conference on power electronics and applications, 1-10, 2014
552014
Study of current density influence on bond wire degradation rate in SiC MOSFET modules
H Luo, F Iannuzzo, N Baker, F Blaabjerg, W Li, X He
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
422019
Online junction temperature measurement using peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1270-1275, 2015
392015
Simultaneous on-state voltage and bond-wire resistance monitoring of silicon carbide MOSFETs
N Baker, H Luo, F Iannuzzo
Energies 10 (3), 384, 2017
372017
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules
H Luo, N Baker, F Iannuzzo, F Blaabjerg
Microelectronics Reliability 76, 415-419, 2017
352017
Test setup for long term reliability investigation of Silicon Carbide MOSFETs
N Baker, S Munk-Nielsen, S Bęczkowski
2013 15th European Conference on Power Electronics and Applications (EPE), 1-9, 2013
312013
The temperature dependence of the flatband voltage in high-power IGBTs
N Baker, F Iannuzzo
IEEE Transactions on Industrial Electronics 66 (7), 5581-5584, 2018
292018
Vce-based chip temperature estimation methods for high power IGBT modules during power cycling—A comparison
A Amoiridis, A Anurag, P Ghimire, S Munk-Nielsen, N Baker
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
292015
Development of an X-ray imaging system to prevent scintillator degradation for white synchrotron radiation
T Zhou, H Wang, T Connolley, S Scott, N Baker, K Sawhney
Journal of Synchrotron Radiation 25 (3), 801-807, 2018
212018
Experimental evaluation of IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, L Dupont, M Liserre
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
172015
Impact of Kelvin-source resistors on current sharing and failure detection in multichip power modules
N Baker, F Iannuzzo, H Li
2018 20th European Conference on Power Electronics and Applications (EPE'18 …, 2018
152018
Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis
H Du, S Letz, N Baker, T Goetz, F Iannuzzo, A Schletz
Microelectronics Reliability 114, 113784, 2020
122020
An electrical method for junction temperature measurement of power semiconductor switches
N Baker
122016
Smart SiC MOSFET accelerated lifetime testing
N Baker, F Iannuzzo
Microelectronics Reliability 88, 43-47, 2018
112018
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