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A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs
A Goodrich, P Hacke, Q Wang, B Sopori, R Margolis, TL James, ...
Solar Energy Materials and Solar Cells 114, 110-135, 2013
3932013
Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki
Applied physics letters 63 (19), 2676-2678, 1993
3821993
Review of failures of photovoltaic modules
M Köntges, S Kurtz, CE Packard, U Jahn, KA Berger, K Kato, T Friesen, ...
IEA International Energy Agency, 2014
3812014
Analysis of deep levels in n‐type GaN by transient capacitance methods
P Hacke, T Detchprohm, K Hiramatsu, N Sawaki, K Tadatomo, K Miyake
Journal of applied physics 76 (1), 304-309, 1994
3341994
Potential-induced degradation in photovoltaic modules: a critical review
W Luo, YS Khoo, P Hacke, V Naumann, D Lausch, SP Harvey, JP Singh, ...
Energy & Environmental Science 10 (1), 43-68, 2017
3252017
Growth and characterization of cubic GaN
H Okumura, K Ohta, G Feuillet, K Balakrishnan, S Chichibu, H Hamaguchi, ...
Journal of crystal Growth 178 (1-2), 113-133, 1997
2241997
Interconnect Technologies for Back Contact Solar Cells and Modules
P Hacke, DH Meakin, JM Gee, S Southimath, B Murphy
US Patent App. 11/963,841, 2008
1902008
System voltage potential-induced degradation mechanisms in PV modules and methods for test
P Hacke, K Terwilliger, R Smith, S Glick, J Pankow, M Kempe, SKI Bennett, ...
2011 37th IEEE Photovoltaic Specialists Conference, 000814-000820, 2011
1842011
Back-contact solar cells and methods for fabrication
JM Gee, P Hacke
US Patent 7,144,751, 2006
1842006
Deep levels in the upper band‐gap region of lightly Mg‐doped GaN
P Hacke, H Nakayama, T Detchprohm, K Hiramatsu, N Sawaki
Applied physics letters 68 (10), 1362-1364, 1996
1611996
Characterization of multicrystalline silicon modules with system bias voltage applied in damp heat
P Hacke, M Kempe, K Terwilliger, S Glick, N Call, S Johnston, S Kurtz
National Renewable Energy Lab.(NREL), Golden, CO (United States), 2011
1402011
Monitoring surface stoichiometry with the (2× 2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
P Hacke, G Feuillet, H Okumura, S Yoshida
Applied physics letters 69 (17), 2507-2509, 1996
1401996
Process and fabrication methods for emitter wrap through back contact solar cells
P Hacke, J Gee
US Patent App. 11/220,927, 2006
1372006
Enabling reliability assessments of pre-commercial perovskite photovoltaics with lessons learned from industrial standards
HJ Snaith, P Hacke
Nature Energy 3 (6), 459-465, 2018
1182018
Buried-contact solar cells with self-doping contacts
JM Gee, P Hacke
US Patent 7,335,555, 2008
1172008
Contact fabrication of emitter wrap-through back contact silicon solar cells
P Hacke, J Gee
US Patent App. 11/050,184, 2005
1152005
Electrical transport properties of p-GaN
H Nakayama, P Hacke, MRH Khan, T Detchprohm, KHK Hiramatsu, ...
Japanese journal of applied physics 35 (3A), L282, 1996
1101996
Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress
P Hacke, R Smith, K Terwilliger, S Glick, D Jordan, S Johnston, M Kempe, ...
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-8, 2012
1052012
Characterization of the shallow and deep levels in Si doped GaN grown by metal-organic vapor phase epitaxy
P Hacke, A Maekawa, N Koide, KHK Hiramatsu, NSN Sawaki
Japanese journal of applied physics 33 (12R), 6443, 1994
1031994
Arsenic mediated reconstructions on cubic (001) GaN
G Feuillet, H Hamaguchi, K Ohta, P Hacke, H Okumura, S Yoshida
Applied physics letters 70 (8), 1025-1027, 1997
941997
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