Klaus Irmscher
Klaus Irmscher
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On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari
Journal of Applied Physics 110 (6), 2011
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka, R Uecker, D Klimm, K Irmscher, M Naumann, M Pietsch, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3007, 2016
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari
Applied Physics Letters 101 (13), 2012
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
Hydrogen-related deep levels in proton-bombarded silicon
K Irmscher, H Klose, K Maass
Journal of Physics C: Solid State Physics 17 (35), 6317, 1984
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
On the nature and temperature dependence of the fundamental band gap of In2O3
K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ...
physica status solidi (a) 211 (1), 54-58, 2014
Formation of the deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
I Pintilie, L Pintilie, K Irmscher, B Thomas
Applied physics letters 81 (25), 4841-4843, 2002
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18 (19), 3488-3497, 2016
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