| 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang IEEE Electron Device Letters 37 (2), 165-168, 2015 | 109 | 2015 |
| High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode Q Zhou, Y Jin, Y Shi, J Mou, X Bao, B Chen, B Zhang IEEE Electron Device Letters 36 (7), 660-662, 2015 | 101 | 2015 |
| Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ... IEEE Electron Device Letters 38 (11), 1567-1570, 2017 | 95 | 2017 |
| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE Transactions on Electron Devices 63 (2), 614-619, 2016 | 94 | 2016 |
| High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/Figure of Merit Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang IEEE Transactions on Electron Devices 62 (3), 776-781, 2015 | 84 | 2015 |
| Carrier Transport Mechanisms Underlying the Bidirectional Shift in p-GaN Gate HEMTs Under Forward Gate Stress Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang IEEE Transactions on Electron Devices 66 (2), 876-882, 2018 | 66 | 2018 |
| Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ... Applied Physics Letters 107 (26), 2015 | 61 | 2015 |
| Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures J Zhang, X Kang, X Wang, S Huang, C Chen, K Wei, Y Zheng, Q Zhou, ... IEEE Electron Device Letters 39 (6), 847-850, 2018 | 57 | 2018 |
| Antiproliferative and apoptosis-inducing effect of exo-protoporphyrin IX based sonodynamic therapy on human oral squamous cell carcinoma Y Lv, J Zheng, Q Zhou, L Jia, C Wang, N Liu, H Zhao, H Ji, B Li, W Cao Scientific reports 7 (1), 40967, 2017 | 56 | 2017 |
| AlGaN/GaN MISHEMTs With High-Gate Dielectric S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ... IEEE Electron Device Letters 33 (7), 979-981, 2012 | 53 | 2012 |
| Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement Q Zhou, W Chen, S Liu, B Zhang, Z Feng, S Cai, KJ Chen IEEE transactions on electron devices 60 (3), 1075-1081, 2013 | 46 | 2013 |
| Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 44 | 2016 |
| Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 43 | 2018 |
| High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination X Guo, Y Zhong, J He, Y Zhou, S Su, X Chen, J Liu, H Gao, X Sun, Q Zhou, ... IEEE Electron Device Letters 42 (4), 473-476, 2021 | 42 | 2021 |
| Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage Q Zhou, H Chen, C Zhou, ZH Feng, SJ Cai, KJ Chen IEEE electron device letters 33 (1), 38-40, 2011 | 42 | 2011 |
| Analytical switching loss model for GaN-based control switch and synchronous rectifier in low-voltage buck converters Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, M Li, J Li, Q Zhou, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 34 | 2019 |
| Device technologies of GaN-on-Si for power electronics: Enhancement-mode hybrid MOS-HFET and lateral diode Q Zhou, Y Yang, K Hu, R Zhu, W Chen, B Zhang IEEE Transactions on Industrial electronics 64 (11), 8971-8979, 2017 | 33 | 2017 |
| Design and experimental verification of an efficient SSCB based on CS-MCT X Xu, W Chen, H Tao, Q Zhou, Z Li, B Zhang IEEE Transactions on Power Electronics 35 (11), 11682-11693, 2020 | 29 | 2020 |
| Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device Y Shi, Q Zhou, A Zhang, L Zhu, Y Shi, W Chen, Z Li, B Zhang Nanoscale research letters 12, 1-6, 2017 | 29 | 2017 |
| Silicon dioxide as an efficient adsorbent in the degumming of rapeseed oil Y Yao, C Liu, W Xiong, Q Liang, P Xuan, X Zeng, S Zeng, Q Zhou, ... Journal of cleaner production 268, 122344, 2020 | 24 | 2020 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
