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Michele Goano
Michele Goano
Professor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni
Verified email at polito.it - Homepage
Title
Cited by
Cited by
Year
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
6052001
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 2013
4872013
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6467-6475, 2000
1812000
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ...
physica status solidi (a) 212 (5), 947-953, 2015
1272015
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and
M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6476-6482, 2000
1262000
A numerical study of Auger recombination in bulk InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 2010
1082010
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 2007
1022007
Numerical analysis of indirect Auger transitions in InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 2012
912012
Alloy scattering in AlGaN and InGaN: A numerical study
E Bellotti, F Bertazzi, M Goano
Journal of Applied Physics 101 (12), 2007
852007
Algorithm 745: Computation of the complete and incomplete Fermi-Dirac integral
M Goano
ACM Transactions on Mathematical Software (TOMS) 21 (3), 221-232, 1995
841995
Series expansion of the Fermi-Dirac integral Fj (x) over the entire domain of real j and x
M Goano
Solid-State Electronics 36 (2), 217-221, 1993
811993
Role of defects in the thermal droop of InGaN-based light emitting diodes
C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ...
Journal of Applied Physics 119 (9), 2016
782016
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated lithium niobate substrates for electrooptical applications
G Ghione, M Goano, GL Madonna, G Omegna, M Pirola, S Bosso, ...
IEEE Transactions on microwave theory and techniques 47 (12), 2287-2293, 1999
761999
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
M Meneghini, C De Santi, A Tibaldi, M Vallone, F Bertazzi, G Meneghesso, ...
Journal of applied Physics 127 (21), 2020
662020
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti
Applied Physics Letters 103 (8), 2013
652013
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section
M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001
652001
Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates
G Ghione, M Goano
IEEE Transactions on microwave theory and techniques 51 (9), 2007-2014, 2003
622003
Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation
E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti
Solid-state electronics 52 (11), 1796-1801, 2008
552008
Electron and hole transport in bulk ZnO: A full band Monte Carlo study
F Bertazzi, M Goano, E Bellotti
Journal of Electronic Materials 36, 857-863, 2007
542007
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
M Mandurrino, M Goano, M Vallone, F Bertazzi, G Ghione, G Verzellesi, ...
Journal of Computational Electronics 14, 444-455, 2015
512015
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