Shinji Koh
Title
Cited by
Cited by
Year
Ultrahigh room-temperature hole Hall and effective mobility in heterostructures
T Irisawa, S Tokumitsu, T Hattori, K Nakagawa, S Koh, Y Shiraki
Applied physics letters 81 (5), 847-849, 2002
1082002
GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs (100) and (111) substrates for nonlinear optical devices
S Koh, T Kondo, M Ebihara, T Ishiwada, H Sawada, H Ichinose, I Shoji, ...
Japanese journal of applied physics 38 (5A), L508, 1999
851999
Room temperature circularly polarized lasing in an optically spin injected vertical-cavity surface-emitting laser with (110) GaAs quantum wells
S Iba, S Koh, K Ikeda, H Kawaguchi
Applied Physics Letters 98 (8), 081113, 2011
832011
In-plane strain fluctuation in strained-Si/SiGe heterostructures
K Sawano, S Koh, Y Shiraki, N Usami, K Nakagawa
Applied physics letters 83 (21), 4339-4341, 2003
752003
GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices
S Koh, T Kondo, Y Shiraki, R Ito
Journal of crystal growth 227, 183-192, 2001
702001
Extremely high room-temperature two-dimensional hole gas mobility in p-type modulation-doped heterostructures
M Myronov, T Irisawa, OA Mironov, S Koh, Y Shiraki, TE Whall, ...
Applied physics letters 80 (17), 3117-3119, 2002
662002
Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy
S Koh, T Kondo, T Ishiwada, C Iwamoto, H Ichinose, H Yaguchi, T Usami, ...
Japanese journal of applied physics 37 (12B), L1493, 1998
561998
Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection
H Fujino, S Koh, S Iba, T Fujimoto, H Kawaguchi
Applied Physics Letters 94 (13), 131108, 2009
522009
Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning
K Sawano, K Kawaguchi, S Koh, Y Hirose, T Hattori, K Nakagawa, ...
Journal of The Electrochemical Society 150 (7), G376-G379, 2003
502003
Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
T Irisawa, M Myronov, OA Mironov, EHC Parker, K Nakagawa, M Murata, ...
Applied Physics Letters 82 (9), 1425-1427, 2003
492003
Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
K Sawano, S Koh, Y Shiraki, Y Ozawa, T Hattori, J Yamanaka, K Suzuki, ...
Applied physics letters 85 (13), 2514-2516, 2004
482004
K. Nakagawa, T. Hattori and Y. Shiraki
K Sawano, Y Hirose, Y Ozawa, S Koh, J Yamanaka
Jpn. J. Appl. Phys 42, L735, 2003
352003
Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite
S Uda, X Huang, S Koh
Journal of crystal growth 281 (2-4), 481-491, 2005
342005
Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing
K Sawano, K Kawaguchi, T Ueno, S Koh, K Nakagawa, Y Shiraki
Materials Science and Engineering: B 89 (1-3), 406-409, 2002
342002
Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing
K Sawano, S Koh, Y Shiraki, Y Hirose, T Hattori, K Nakagawa
Applied physics letters 82 (3), 412-414, 2003
322003
The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method
H Kimura, S Uda, O Buzanov, X Huang, S Koh
Journal of electroceramics 20 (2), 73-80, 2008
312008
Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates
K Kawaguchi, M Morooka, K Konishi, S Koh, Y Shiraki
Applied physics letters 81 (5), 817-819, 2002
282002
Switching of lasing circular polarizations in a (110)-VCSEL
K Ikeda, T Fujimoto, H Fujino, T Katayama, S Koh, H Kawaguchi
IEEE Photonics Technology Letters 21 (18), 1350-1352, 2009
242009
Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates
K Sawano, Y Hirose, S Koh, K Nakagawa, T Hattori, Y Shiraki
Journal of crystal growth 251 (1-4), 685-688, 2003
232003
SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications
N Usami, Y Azuma, T Ujihara, G Sazaki, K Nakajima, Y Yakabe, T Kondo, ...
Applied Physics Letters 77 (22), 3565-3567, 2000
222000
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