| Room temperature circularly polarized lasing in an optically spin injected vertical-cavity surface-emitting laser with (110) GaAs quantum wells S Iba, S Koh, K Ikeda, H Kawaguchi Applied Physics Letters 98 (8), 2011 | 128 | 2011 |
| Ultrahigh room-temperature hole Hall and effective mobility in heterostructures T Irisawa, S Tokumitsu, T Hattori, K Nakagawa, S Koh, Y Shiraki Applied Physics Letters 81 (5), 847-849, 2002 | 115 | 2002 |
| GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs (100) and (111) substrates for nonlinear optical devices Shinji Koh, Takashi Kondo, Ebihara, Minoru, Ishiwada, Tetsuya, Sawada ... Japanese journal of applied physics 38 (5A), L508, 1999 | 105 | 1999 |
| In-plane strain fluctuation in strained-Si/SiGe heterostructures K Sawano, S Koh, Y Shiraki, N Usami, K Nakagawa Applied physics letters 83 (21), 4339-4341, 2003 | 84 | 2003 |
| GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices S Koh, T Kondo, Y Shiraki, R Ito Journal of crystal growth 227, 183-192, 2001 | 79 | 2001 |
| Extremely high room-temperature two-dimensional hole gas mobility in p-type modulation-doped heterostructures M Myronov, T Irisawa, OA Mironov, S Koh, Y Shiraki, TE Whall, ... Applied physics letters 80 (17), 3117-3119, 2002 | 67 | 2002 |
| Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection H Fujino, S Koh, S Iba, T Fujimoto, H Kawaguchi Applied Physics Letters 94 (13), 2009 | 66 | 2009 |
| Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy S Koh, T Kondo, T Ishiwada, C Iwamoto, H Ichinose, H Yaguchi, T Usami, ... Japanese journal of applied physics 37 (12B), L1493, 1998 | 59 | 1998 |
| Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures T Irisawa, M Myronov, OA Mironov, EHC Parker, K Nakagawa, M Murata, ... Applied Physics Letters 82 (9), 1425-1427, 2003 | 56 | 2003 |
| Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates K Sawano, S Koh, Y Shiraki, Y Ozawa, T Hattori, J Yamanaka, K Suzuki, ... Applied physics letters 85 (13), 2514-2516, 2004 | 51 | 2004 |
| Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning K Sawano, K Kawaguchi, S Koh, Y Hirose, T Hattori, K Nakagawa, ... Journal of The Electrochemical Society 150 (7), G376, 2003 | 49 | 2003 |
| Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasite S Uda, X Huang, S Koh Journal of crystal growth 281 (2-4), 481-491, 2005 | 44 | 2005 |
| Temperature dependence of transport properties of high mobility holes in Ge quantum wells M Myronov, T Irisawa, S Koh, OA Mironov, TE Whall, EH Parker Journal of Applied Physics 97, 083701, 2005 | 43* | 2005 |
| Graphene-based optically transparent dipole antenna S Kosuga, R Suga, O Hashimoto, S Koh Applied Physics Letters 110 (23), 2017 | 40 | 2017 |
| The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method H Kimura, S Uda, O Buzanov, X Huang, S Koh Journal of electroceramics 20, 73-80, 2008 | 39 | 2008 |
| Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing K Sawano, K Kawaguchi, T Ueno, S Koh, K Nakagawa, Y Shiraki Materials Science and Engineering: B 89 (1-3), 406-409, 2002 | 37 | 2002 |
| Switching of lasing circular polarizations in a (110)-VCSEL K Ikeda, T Fujimoto, H Fujino, T Katayama, S Koh, H Kawaguchi IEEE Photonics Technology Letters 21 (18), 1350-1352, 2009 | 36 | 2009 |
| Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates K Sawano, Y Hirose, Y Ozawa, S Koh, J Yamanaka, K Nakagawa Japanese Journal of Applied Physics 42, 735-737, 2003 | 35 | 2003 |
| Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing K Sawano, S Koh, Y Shiraki, Y Hirose, T Hattori, K Nakagawa Applied physics letters 82 (3), 412-414, 2003 | 33 | 2003 |
| Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates K Kawaguchi, M Morooka, K Konishi, S Koh, Y Shiraki Applied physics letters 81 (5), 817-819, 2002 | 30 | 2002 |
Takashi KondoThe University of TokyoVerified email at castle.t.u-tokyo.ac.jp
