Follow
Guangyuan Lu
Guangyuan Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
Verified email at mail.sim.ac.cn
Title
Cited by
Cited by
Year
Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys
T Wu, X Zhang, Q Yuan, J Xue, G Lu, Z Liu, H Wang, H Wang, F Ding, ...
Nature materials 15 (1), 43-47, 2016
6262016
Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy
G Lu, T Wu, Q Yuan, H Wang, H Wang, F Ding, X Xie, M Jiang
Nature communications 6 (1), 6160, 2015
4602015
Intrinsic toughening and stable crack propagation in hexagonal boron nitride
Y Yang, Z Song, G Lu, Q Zhang, B Zhang, B Ni, C Wang, X Li, L Gu, X Xie, ...
Nature 594 (7861), 57-61, 2021
1132021
Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
Z Shi, X Wang, Q Li, P Yang, G Lu, R Jiang, H Wang, C Zhang, C Cong, ...
Nature communications 11 (1), 849, 2020
932020
Synthesis of high‐quality graphene and hexagonal boron nitride monolayer In‐plane heterostructure on Cu–Ni alloy
G Lu, T Wu, P Yang, Y Yang, Z Jin, W Chen, S Jia, H Wang, G Zhang, ...
Advanced Science 4 (9), 1700076, 2017
842017
Dielectric breakdown in chemical vapor deposited hexagonal boron nitride
L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ...
ACS applied materials & interfaces 9 (45), 39758-39770, 2017
522017
Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy.
C Yang, T Wu, H Wang, G Zhang, J Sun, G Lu, T Niu, A Li, X Xie, M Jiang
Small (Weinheim an der Bergstrasse, Germany) 12 (15), 2009-2013, 2016
472016
Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride
X Ren, J Dong, P Yang, J Li, G Lu, T Wu, H Wang, W Guo, Z Zhang, ...
Physical Review Materials 3 (1), 014004, 2019
292019
High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments
L Jiang, N Xiao, B Wang, E Grustan-Gutierrez, X Jing, P Babor, M Kolíbal, ...
Nano Research 10, 2046-2055, 2017
252017
Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe 2 B alloy
Z Shi, G Lu, P Yang, T Wu, W Yin, C Zhang, R Jiang, X Xie
RSC advances 9 (18), 10155-10158, 2019
182019
Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu–Ni alloy
G Lu, G Zhang, J Sun, X Wang, Z Shi, D Jiang, H Wang, A Li, T Wu, Q Yu, ...
Carbon 152, 521-526, 2019
162019
CVD growth of high-quality and large-area continuous h-BN thin films directly on stainless-steel as protective coatings
S Jia, W Chen, J Zhang, CY Lin, H Guo, G Lu, K Li, T Zhai, Q Ai, J Lou
Materials Today Nano 16, 100135, 2021
132021
Synthesis of continuous hexagonal boron nitride films on alloy substrate
G Lu, T Wu, H Wang, P Yang, Z Shi, C Yang, X Xie
Materials Letters 196, 252-255, 2017
42017
Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supply
WU Tianru, X Zhang, LU Guangyuan, C Yang, H Wang, X Xie, M Jiang
US Patent 10,253,428, 2019
12019
Growth method of graphene
H Wang, S Tang, LU Guangyuan, WU Tianru, D Jiang, G Ding, X Zhang, ...
US Patent 10,017,878, 2018
12018
Synthesis of multilayer hexagonal boron nitride on Cu-Ni alloy by chemical vapor deposition
Y Peng, WU TianRu, W HaoMin, LU GuangYuan, D LianWen, SX HUANG
Chinese Science Bulletin 62 (20), 2279-2286, 2017
12017
Method for preparing multi-layer hexagonal boron nitride film
SHI Zhiyuan, WU Tianru, LU Guangyuan, X Wang, C Zhang, H Wang, ...
US Patent 11,679,978, 2023
2023
12-inch 90-nm BCD Process Optimization: Reducing Wafer Edge LDMOS Leakage
H Chen, L Wang, L Xiao, Y Chen, T Chen, G Lu, J Wang, F Ji
2022 China Semiconductor Technology International Conference (CSTIC), 1-3, 2022
2022
Potential Applications of h-BN Crystals in Future ULSI
G Lu, Y Chen, H Chen
2020 China Semiconductor Technology International Conference (CSTIC), 1-3, 2020
2020
The system can't perform the operation now. Try again later.
Articles 1–19