Iulian Gherasoiu
Iulian Gherasoiu
SUNY Polytechnic Institute
Verified email at sunyit.edu
Title
Cited by
Cited by
Year
Demonstration of a III–nitride/silicon tandem solar cell
LA Reichertz, I Gherasoiu, KM Yu, VM Kao, W Walukiewicz, JW Ager III
Applied physics express 2 (12), 122202, 2009
792009
Electron cyclotron effective mass in indium nitride
M Goiran, M Millot, JM Poumirol, I Gherasoiu, W Walukiewicz, J Leotin
Applied physics letters 96 (5), 052117, 2010
472010
Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy
M Millot, N Ubrig, JM Poumirol, I Gherasoiu, W Walukiewicz, S George, ...
Physical Review B 83 (12), 125204, 2011
372011
Effect of stress and free-carrier concentration on photoluminescence in InN
DY Song, ME Holtz, A Chandolu, A Bernussi, SA Nikishin, MW Holtz, ...
Applied Physics Letters 92 (12), 121913, 2008
362008
AlN/AlGaN Bragg reflectors grown by gas source molecular beam epitaxy
G Kipshidze, V Kuryatkov, K Choi, I Gherasoiu, B Borisov, S Nikishin, ...
physica status solidi (a) 188 (2), 881-884, 2001
282001
Gas source molecular beam epitaxy of high quality on Si(111)
S Nikishin, G Kipshidze, V Kuryatkov, K Choi, Ì Gherasoiu, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
282001
Electrical properties of junctions based on superlattices of AlN/AlGa(In)N
V Kuryatkov, K Zhu, B Borisov, A Chandolu, I Gherasoiu, G Kipshidze, ...
Applied physics letters 83 (7), 1319-1321, 2003
242003
Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration
ME Holtz, I Gherasoiu, V Kuryatkov, SA Nikishin, AA Bernussi, MW Holtz
Journal of Applied Physics 105 (6), 063702, 2009
232009
High quality InxGa1–xN thin films with x > 0.2 grown on silicon
I Gherasoiu, KM Yu, LA Reichertz, VM Kao, M Hawkridge, JW Ager, ...
physica status solidi (b) 247 (7), 1747-1749, 2010
202010
InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy
I Gherasoiu, KM Yu, LA Reichertz, W Walukiewicz
physica status solidi (c) 11 (3‐4), 381-384, 2014
172014
Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
W Walukiewicz, I Gherasoiu, LA Reichertz
US Patent 9,029,867, 2015
152015
High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
G Kipshidze, S Nikishin, V Kuryatkov, K Choi, Ì Gherasoiu, T Prokofyeva, ...
Journal of electronic materials 30 (7), 825-828, 2001
142001
Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system
I Gherasoiu, M O’Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (3 …, 2008
132008
Growth mechanism of AlN by metal-organic molecular beam epitaxy
HT I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov, A. Chandolu, C ...
Journal of Applied Physics 96 (11), 2004
122004
Photovoltaic action from InxGa1‐xN p‐n junctions with x > 0.2 grown on silicon
I Gherasoiu, LA Reichertz, KM Yu, JW Ager III, VM Kao, W Walukiewicz
physica status solidi c 8 (7‐8), 2466-2468, 2011
112011
Tandem Photoelectrochemical Cell for Water Dissociation
W Walukiewicz, I Gherasoiu
US Patent App. 12/833,790, 2011
92011
InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices
I Gherasoiu, KM Yu, L Reichertz, W Walukiewicz
Journal of Crystal Growth 425, 393-397, 2015
82015
Growth of high quality InN on production style PA‐MBE system
I Gherasoiu, M O'Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ...
physica status solidi c 5 (6), 1642-1644, 2008
62008
Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
W Walukiewicz, I Gherasoiu, L Reichertz
US Patent 9,312,430, 2016
52016
Mechanism of carrier transport in hybrid GaN/AlN/Si solar cells
H Ekinci, VV Kuryatkov, I Gherasoiu, SY Karpov, SA Nikishin
Journal of Electronic Materials 46 (10), 6078-6083, 2017
42017
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