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Gang LYU
Gang LYU
Andre navneG.Lyu, 吕纲
Beijing University of Aeronautics and Astronautics
Bekræftet mail på ust.hk
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Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker
Z Chen, Z Yu, X Zhang, T Wei, G Lyu, L Qu, Y Huang, R Zeng
IEEE Transactions on Industrial Electronics 65 (4), 2883-2892, 2017
1392017
Transient model and operation characteristics researches of hybrid DC circuit breaker
T Zhu, Z Yu, R Zeng, G Lü, Z Chen, X Zhang, Y Zhao, M Chen, Y Huang, ...
Proc. CSEE 36 (1), 18-30, 2016
362016
A Novel Mixture Solid-State Switch Based on IGCT With High Capacity and IGBT With High Turn-off Ability for Hybrid DC Breakers
X Zhang, Z Yu, B Zhao, Z Chen, G Lv, Y Huang, R Zeng
IEEE Transactions on Industrial Electronics 67 (6), 4485-4495, 2019
352019
Researches on commutating characteristics of mechanical vacuum switch in 10 kV natural-commutate hybrid DC circuit breaker
L Gang, Z Rong, H Yulong
Proceedings of the CSEE 37 (4), 1012-1020, 2017
192017
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen
IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020
182020
Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices
Y Wang, G Lyu, J Wei, Z Zheng, J He, J Lei, KJ Chen
IEEE Transactions on Industrial Electronics 67 (12), 10284-10294, 2019
172019
Optimisation of gate‐commutated thyristors for hybrid DC breakers
G Lyu, Z Yu, R Zeng, J Liu, X Zhang, T Long, P Palmer
IET Power Electronics 10 (14), 2002-2009, 2017
162017
混合式直流断路器模型及其操作暂态特性研究
朱童, 余占清, 曾嵘, 吕纲, 陈政宇, 张翔宇, 赵宇明, 陈名, 黄瑜珑, ...
中国电机工程学报 36 (1), 18-30, 2016
132016
应用于混合式直流断路器的电流转移方法
温伟杰, 黄瑜珑, 吕纲, 余占清, 曾嵘, 刘卫东
高电压技术 42 (12), 4005-4012, 2016
112016
Measuring AC/DC hybrid electric field using an integrated optical electric field sensor
H Wang, R Zeng, C Zhuang, G Lyu, J Yu, B Niu, C Li
Electric Power Systems Research 179, 106087, 2020
102020
Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application
G Lyu, C Zhuang, R Zeng, T Long, PR Palmer
IET Power Electronics 11 (7), 1239-1247, 2018
102018
Distinct short circuit capability of 650-v p-gan gate hemts under single and repetitive tests
J Sun, J Wei, Z Zheng, G Lyu, KJ Chen
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
92020
Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device
G Lyu, Y Wang, J Wei, Z Zheng, KJ Chen
IEEE Transactions on Power Electronics 36 (3), 3312-3322, 2020
92020
Mechanism and novel structure for di/dt controllability in U-shaped channel silicon-on-insulator lateral IGBTs
L Zhang, J Zhu, S Cao, J Ma, A Li, J Wei, G Lyu, S Li, S Li, J Wei, W Wu, ...
IEEE Electron Device Letters 40 (10), 1658-1661, 2019
92019
GaN integrated bridge circuits on bulk silicon substrate: Issues and proposed solution
J Wei, M Zhang, G Lyu, KJ Chen
IEEE Journal of the Electron Devices Society 9, 545-551, 2021
82021
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen
Applied Physics Letters 118 (16), 163502, 2021
82021
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
Y Wang, G Lyu, J Wei, Z Zheng, J Lei, W Song, L Zhang, M Hua, KJ Chen
Applied Physics Express 12 (10), 106505, 2019
72019
Simulation on transient characteristics of medium voltage DC distribution system
T Zhu, ZQ Yu, R Zeng, G Lyu, ZY Chen, XY Zhang
IET Digital Library, 2016
72016
10kV 自然换流型混合式直流断路器中真空电弧电流转移特性研究
吕纲, 曾嵘, 黄瑜珑, 陈政宇
中国电机工程学报 37 (4), 1012-1020, 2017
62017
基于 IGCT 串联的 10kV 直流混合断路器研究
陈政宇, 余占清, 吕纲, 黄瑜珑, 曾嵘, 陈名, 赵宇明, 黎小林, 温伟杰, ...
中国电机工程学报 36 (2), 317-326, 2016
62016
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