| Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker Z Chen, Z Yu, X Zhang, T Wei, G Lyu, L Qu, Y Huang, R Zeng IEEE Transactions on Industrial Electronics 65 (4), 2883-2892, 2017 | 179 | 2017 |
| A Novel Mixture Solid-State Switch Based on IGCT With High Capacity and IGBT With High Turn-off Ability for Hybrid DC Breakers X Zhang, Z Yu, B Zhao, Z Chen, G Lv, Y Huang, R Zeng IEEE Transactions on Industrial Electronics 67 (6), 4485-4495, 2019 | 50 | 2019 |
| Transient model and operation characteristics researches of hybrid DC circuit breaker T Zhu, Z Yu, R Zeng, G Lv, ZY Chen Proceedings of the CSEE 36 (1), 18-30, 2016 | 40 | 2016 |
| A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020 | 29 | 2020 |
| Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices Y Wang, G Lyu, J Wei, Z Zheng, J He, J Lei, KJ Chen IEEE Transactions on Industrial Electronics 67 (12), 10284-10294, 2019 | 24 | 2019 |
| Measuring AC/DC hybrid electric field using an integrated optical electric field sensor H Wang, R Zeng, C Zhuang, G Lyu, J Yu, B Niu, C Li Electric power systems research 179, 106087, 2020 | 22 | 2020 |
| Researches on commutating characteristics of mechanical vacuum switch in 10 kV natural-commutate hybrid DC circuit breaker L Gang, Z Rong, H Yulong, C Zhengyu Proceedings of the CSEE 37 (4), 1012-1020, 2017 | 22 | 2017 |
| Distinct short circuit capability of 650-v p-gan gate hemts under single and repetitive tests J Sun, J Wei, Z Zheng, G Lyu, KJ Chen 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 19 | 2020 |
| GaN integrated bridge circuits on bulk silicon substrate: Issues and proposed solution J Wei, M Zhang, G Lyu, KJ Chen IEEE Journal of the Electron Devices Society 9, 545-551, 2021 | 17 | 2021 |
| Optimisation of gate‐commutated thyristors for hybrid DC breakers G Lyu, Z Yu, R Zeng, J Liu, X Zhang, T Long, P Palmer IET Power Electronics 10 (14), 2002-2009, 2017 | 17 | 2017 |
| 混合式直流断路器模型及其操作暂态特性研究 朱童， 余占清， 曾嵘， 吕纲， 陈政宇， 张翔宇， 赵宇明， 陈名， 黄瑜珑， ... 中国电机工程学报 36 (1), 18-30, 2016 | 16 | 2016 |
| Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen Applied Physics Letters 118 (16), 2021 | 14 | 2021 |
| Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device G Lyu, Y Wang, J Wei, Z Zheng, KJ Chen IEEE Transactions on Power Electronics 36 (3), 3312-3322, 2020 | 12 | 2020 |
| Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application G Lyu, C Zhuang, R Zeng, T Long, PR Palmer IET Power Electronics 11 (7), 1239-1247, 2018 | 11 | 2018 |
| 应用于混合式直流断路器的电流转移方法 温伟杰， 黄瑜珑， 吕纲， 余占清， 曾嵘， 刘卫东 高电压技术 42 (12), 4005-4012, 2016 | 11 | 2016 |
| A GaN power integration platform based on engineered bulk Si substrate with eliminated crosstalk between high-side and low-side HEMTs G Lyu, J Wei, W Song, Z Zheng, L Zhang, J Zhang, Y Cheng, S Feng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2021 | 10 | 2021 |
| GaN on engineered bulk Si (GaN-on-EBUS) substrate for monolithic integration of high-/low-side switches in bridge circuits G Lyu, J Wei, W Song, Z Zheng, L Zhang, J Zhang, S Feng, KJ Chen IEEE Transactions on Electron Devices 69 (8), 4162-4169, 2022 | 9 | 2022 |
| Short-circuit failure mechanisms of 650-V GaN/SiC cascode devices in comparison with SiC MOSFETs J Sun, K Zhong, Z Zheng, G Lyu, KJ Chen IEEE Transactions on Industrial Electronics 69 (7), 7340-7348, 2021 | 9 | 2021 |
| A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor Y Wang, G Lyu, J Wei, Z Zheng, J Lei, W Song, L Zhang, M Hua, KJ Chen Applied Physics Express 12 (10), 106505, 2019 | 9 | 2019 |
| Mechanism and novel structure for di/dt controllability in U-shaped channel silicon-on-insulator lateral IGBTs L Zhang, J Zhu, S Cao, J Ma, A Li, J Wei, G Lyu, S Li, S Li, J Wei, W Wu, ... IEEE Electron Device Letters 40 (10), 1658-1661, 2019 | 9 | 2019 |
Jin WeiPeking UniversityVerificeret mail på pku.edu.cn
