Gang LYU
Gang LYU
Andre navneG.Lyu, 吕纲
Beijing University of Aeronautics and Astronautics
Bekræftet mail på ust.hk
Citeret af
Citeret af
Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker
Z Chen, Z Yu, X Zhang, T Wei, G Lyu, L Qu, Y Huang, R Zeng
IEEE Transactions on Industrial Electronics 65 (4), 2883-2892, 2017
Transient model and operation characteristics researches of hybrid DC circuit breaker
T Zhu, Z Yu, R Zeng, G Lü, Z Chen, X Zhang, Y Zhao, M Chen, Y Huang, ...
Proc. CSEE 36 (1), 18-30, 2016
A Novel Mixture Solid-State Switch Based on IGCT With High Capacity and IGBT With High Turn-off Ability for Hybrid DC Breakers
X Zhang, Z Yu, B Zhao, Z Chen, G Lv, Y Huang, R Zeng
IEEE Transactions on Industrial Electronics 67 (6), 4485-4495, 2019
Researches on commutating characteristics of mechanical vacuum switch in 10 kV natural-commutate hybrid DC circuit breaker
L Gang, Z Rong, H Yulong
Proceedings of the CSEE 37 (4), 1012-1020, 2017
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen
IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020
Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices
Y Wang, G Lyu, J Wei, Z Zheng, J He, J Lei, KJ Chen
IEEE Transactions on Industrial Electronics 67 (12), 10284-10294, 2019
Optimisation of gate‐commutated thyristors for hybrid DC breakers
G Lyu, Z Yu, R Zeng, J Liu, X Zhang, T Long, P Palmer
IET Power Electronics 10 (14), 2002-2009, 2017
朱童, 余占清, 曾嵘, 吕纲, 陈政宇, 张翔宇, 赵宇明, 陈名, 黄瑜珑, ...
中国电机工程学报 36 (1), 18-30, 2016
温伟杰, 黄瑜珑, 吕纲, 余占清, 曾嵘, 刘卫东
高电压技术 42 (12), 4005-4012, 2016
Measuring AC/DC hybrid electric field using an integrated optical electric field sensor
H Wang, R Zeng, C Zhuang, G Lyu, J Yu, B Niu, C Li
Electric Power Systems Research 179, 106087, 2020
Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application
G Lyu, C Zhuang, R Zeng, T Long, PR Palmer
IET Power Electronics 11 (7), 1239-1247, 2018
Distinct short circuit capability of 650-v p-gan gate hemts under single and repetitive tests
J Sun, J Wei, Z Zheng, G Lyu, KJ Chen
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device
G Lyu, Y Wang, J Wei, Z Zheng, KJ Chen
IEEE Transactions on Power Electronics 36 (3), 3312-3322, 2020
Mechanism and novel structure for di/dt controllability in U-shaped channel silicon-on-insulator lateral IGBTs
L Zhang, J Zhu, S Cao, J Ma, A Li, J Wei, G Lyu, S Li, S Li, J Wei, W Wu, ...
IEEE Electron Device Letters 40 (10), 1658-1661, 2019
GaN integrated bridge circuits on bulk silicon substrate: Issues and proposed solution
J Wei, M Zhang, G Lyu, KJ Chen
IEEE Journal of the Electron Devices Society 9, 545-551, 2021
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen
Applied Physics Letters 118 (16), 163502, 2021
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
Y Wang, G Lyu, J Wei, Z Zheng, J Lei, W Song, L Zhang, M Hua, KJ Chen
Applied Physics Express 12 (10), 106505, 2019
Simulation on transient characteristics of medium voltage DC distribution system
T Zhu, ZQ Yu, R Zeng, G Lyu, ZY Chen, XY Zhang
IET Digital Library, 2016
10kV 自然换流型混合式直流断路器中真空电弧电流转移特性研究
吕纲, 曾嵘, 黄瑜珑, 陈政宇
中国电机工程学报 37 (4), 1012-1020, 2017
基于 IGCT 串联的 10kV 直流混合断路器研究
陈政宇, 余占清, 吕纲, 黄瑜珑, 曾嵘, 陈名, 赵宇明, 黎小林, 温伟杰, ...
中国电机工程学报 36 (2), 317-326, 2016
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