| A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, J Kuzmík Applied Physics Letters 100 (11), 2012 | 162 | 2012 |
| Integrated optical and electrical analysis: Identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress M Ťapajna, RJT Simms, Y Pei, UK Mishra, M Kuball IEEE Electron Device Letters 31 (7), 662-664, 2010 | 162 | 2010 |
| Gate reliability investigation in normally-off p-type-GaN cap/AlGaN/GaN HEMTs under forward bias stress M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmik IEEE Electron Device Letters 37 (4), 385-388, 2016 | 148 | 2016 |
| Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ... Applied Physics Letters 99 (22), 2011 | 103 | 2011 |
| AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes M Kuball, M Ťapajna, RJT Simms, M Faqir, UK Mishra Microelectronics Reliability 51 (2), 195-200, 2011 | 98 | 2011 |
| Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes K Fröhlich, M Ťapajna, A Rosová, E Dobročka, K Hušeková, J Aarik, ... Electrochemical and Solid-State Letters 11 (6), G19, 2008 | 96 | 2008 |
| Gate insulation and drain current saturation mechanism in InAlN∕ GaN metal-oxide-semiconductor high-electron-mobility transistors G Pozzovivo, J Kuzmik, S Golka, W Schrenk, G Strasser, D Pogany, ... Applied Physics Letters 91 (4), 2007 | 95 | 2007 |
| Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Applied Physics Letters 102 (24), 2013 | 67 | 2013 |
| Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmík Applied Physics Letters 107 (19), 2015 | 62 | 2015 |
| Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress M Ťapajna, UK Mishra, M Kuball Applied Physics Letters 97 (2), 2010 | 60 | 2010 |
| Epitaxial growth of high- rutile films on electrodes K Fröhlich, J Aarik, M Ťapajna, A Rosová, A Aidla, E Dobročka, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 52 | 2009 |
| Impact of GaN cap on charges in Al2O3/(GaN/) AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Journal of Applied Physics 116 (10), 2014 | 51 | 2014 |
| Self-heating in GaN transistors designed for high-power operation J Kuzmik, M Ťapajna, L Valik, M Molnar, D Donoval, C Fleury, D Pogany, ... IEEE Transactions on Electron Devices 61 (10), 3429-3434, 2014 | 50 | 2014 |
| Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures M Ťapajna, K Čičo, J Kuzmík, D Pogany, G Pozzovivo, G Strasser, ... Semiconductor science and technology 24 (3), 035008, 2009 | 48 | 2009 |
| Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ... IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014 | 46 | 2014 |
| Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier N Killat, M Ťapajna, M Faqir, T Palacios, M Kuball Electronics letters 47 (6), 405-406, 2011 | 42 | 2011 |
| Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K Čičo, K Hušeková, M Ťapajna, D Gregušová, R Stoklas, J Kuzmík, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 40 | 2011 |
| Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth D Gregušová, M Jurkovič, Š Haščík, M Blaho, A Seifertová, J Fedor, ... Applied Physics Letters 104 (1), 2014 | 35 | 2014 |
| Growth of gadolinium oxide films for advanced MOS structure R Lupták, K Fröhlich, A Rosová, K Hušeková, M Ťapajna, D Machajdı́k, ... Microelectronic engineering 80, 154-157, 2005 | 33 | 2005 |
| Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric M Ťapajna, K Hušeková, JP Espinos, L Harmatha, K Fröhlich Materials science in semiconductor processing 9 (6), 969-974, 2006 | 32 | 2006 |
Martin KuballUniversity of BristolVerified email at bristol.ac.uk
