Xiao-Meng Shen
Xiao-Meng Shen
Material Science, Arizona State University
Verificeret mail på asu.edu
Citeret af
Citeret af
A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy
H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ...
Journal of crystal growth 378, 145-149, 2013
Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
S Liu, H Li, OO Cellek, D Ding, XM Shen, ZY Lin, EH Steenbergen, J Fan, ...
Applied Physics Letters 102 (7), 2013
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
G Feng, XH Zheng, Y Fu, JJ Zhu, XM Shen, BS Zhang, DG Zhao, ...
Journal of crystal growth 240 (3-4), 368-372, 2002
Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy
XM Shen, H Li, S Liu, DJ Smith, YH Zhang
Journal of crystal growth 381, 1-5, 2013
Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation
ZH Feng, H Yang, XH Zheng, Y Fu, YP Sun, XM Shen, YT Wang
Applied physics letters 82 (2), 206-208, 2003
An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography
XM Shen, ZY He, S Liu, ZY Lin, YH Zhang, DJ Smith, MR McCartney
Applied Physics Letters 107 (12), 2015
Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice
J Cui, Y Yao, DW Jiang, GW Wang, YG Wang, X Shen, RC Yu
Journal of Applied Physics 124 (24), 2018
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs (0 0 1) substrates
XM Shen, Y Fu, G Feng, BS Zhang, ZH Feng, YT Wang, H Yang
Journal of crystal growth 246 (1-2), 69-72, 2002
InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications
OO Cellek, H Li, XM Shen, Z Lin, EH Steenbergen, D Ding, S Liu, ...
Infrared Technology and Applications XXXVIII 8353, 1173-1178, 2012
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs (0 0 1) substrates
XM Shen, YT Wang, XH Zheng, BS Zhang, J Chen, G Feng, H Yang
Journal of crystal growth 254 (1-2), 23-27, 2003
Selective area growth of GaN on GaAs (0 0 1) substrates by metalorganic vapor-phase epitaxy
XM Shen, G Feng, BS Zhang, LH Duan, YT Wang, H Yang
Journal of crystal growth 252 (1-3), 9-13, 2003
InAs/InAs1_xSbx superlattices on GaSb substrates: A promising material system for mid-and long-wavelength infrared detectors
EH Steenbergen, OO Cellek, H Li, S Liu, X Shen, D Smith, YH Zhang
The Wonder of Nanotechnology: Quantum Optoelectronic Devices and …, 2013
Study of structural, optical and electrical properties of inas/inassb superlattices using multiple characterization techniques
X Shen
Arizona State University, 2015
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
G Feng, XM Shen, JJ Zhu, BS Zhang, H Yang, JW Liang
physica status solidi (c), 2167-2170, 2003
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
G Feng, XM Shen, JJ Zhu, BS Zhang, DG Zhao, YT Wang, H Yang, ...
Journal of Crystal Growth 250 (3-4), 354-358, 2003
Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography
XM Shen, ZY He, S Liu, YH Zhang, D Smith, M McCartney
Bulletin of the American Physical Society 60, 2015
InAs/InAs1_xSbx superlattices on GaSb substrates
EH Steenbergen, OO Cellek, H Li, S Liu, X Shen, D Smith, YH Zhang
SPIE, 2013
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