| Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber B Shin, O Gunawan, Y Zhu, NA Bojarczuk, SJ Chey, S Guha Progress in Photovoltaics: Research and Applications 21 (1), 72-76, 2013 | 1396 | 2013 |
| Thermally evaporated Cu2ZnSnS4 solar cells K Wang, O Gunawan, T Todorov, B Shin, SJ Chey, NA Bojarczuk, D Mitzi, ... Applied Physics Letters 97 (14), 2010 | 844 | 2010 |
| High efficiency Cu 2 ZnSn (S, Se) 4 solar cells by applying a double In 2 S 3/CdS emitter J Kim, H Hiroi, TK Todorov, O Gunawan, M Kuwahara, T Gokmen, D Nair, ... Adv. Mater 26 (44), 7427-7431, 2014 | 512 | 2014 |
| Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites D Kim, HJ Jung, IJ Park, BW Larson, SP Dunfield, C Xiao, J Kim, J Tong, ... Science 368 (6487), 155-160, 2020 | 511 | 2020 |
| Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier B Shin, Y Zhu, NA Bojarczuk, S Jay Chey, S Guha Applied Physics Letters 101 (5), 2012 | 413 | 2012 |
| Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ... Applied Physics Letters 98 (25), 2011 | 335 | 2011 |
| Building energy performance evaluation of building integrated photovoltaic (BIPV) window with semi-transparent solar cells YT Chae, J Kim, H Park, B Shin Applied Energy 129, 217-227, 2014 | 307 | 2014 |
| An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ... Advanced Materials 28 (35), 7799-7806, 2016 | 284 | 2016 |
| The Role of Sodium as a Surfactant and Suppressor of Non‐Radiative Recombination at Internal Surfaces in Cu2ZnSnS4 T Gershon, B Shin, N Bojarczuk, M Hopstaken, DB Mitzi, S Guha Advanced Energy Materials 5 (2), 1400849, 2015 | 259 | 2015 |
| Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells K Wang, B Shin, KB Reuter, T Todorov, DB Mitzi, S Guha Applied Physics Letters 98 (5), 2011 | 254 | 2011 |
| Electronic properties of the Cu2ZnSn (Se, S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods O Gunawan, T Gokmen, CW Warren, JD Cohen, TK Todorov, ... Applied Physics Letters 100 (25), 2012 | 239 | 2012 |
| A Distributed Model for Border Traps in MOS Devices Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ... IEEE Electron Device Letters 32 (4), 485-487, 2011 | 216 | 2011 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 2010 | 201 | 2010 |
| Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production Y He, L Liu, C Zhu, S Guo, P Golani, B Koo, P Tang, Z Zhao, M Xu, C Zhu, ... Nature Catalysis 5 (3), 212-221, 2022 | 154 | 2022 |
| On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact B Shin, NA Bojarczuk, S Guha Applied Physics Letters 102 (9), 2013 | 144 | 2013 |
| Laser crystallization of organic–inorganic hybrid perovskite solar cells T Jeon, HM Jin, SH Lee, JM Lee, HI Park, MK Kim, KJ Lee, B Shin, ... ACS nano 10 (8), 7907-7914, 2016 | 138 | 2016 |
| Continuous 3D Titanium Nitride Nanoshell Structure for Solar‐Driven Unbiased Biocatalytic CO2 Reduction SK Kuk, Y Ham, K Gopinath, P Boonmongkolras, Y Lee, YW Lee, ... Advanced Energy Materials 9 (25), 1900029, 2019 | 120 | 2019 |
| Stability of halide perovskite solar cell devices: in situ observation of oxygen diffusion under biasing HJ Jung, D Kim, S Kim, J Park, VP Dravid, B Shin Advanced Materials 30 (39), 1802769, 2018 | 120 | 2018 |
| Effects of a SnO 2 hole blocking layer in a BiVO 4-based photoanode on photoelectrocatalytic water oxidation S Byun, B Kim, S Jeon, B Shin Journal of Materials Chemistry A 5 (15), 6905-6913, 2017 | 116 | 2017 |
| Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009 | 116 | 2009 |
Supratik GuhaUniversity of Chicago and Argonne National LaboratoryVerificeret mail på uchicago.edu
