Ananthan Raghunathan
Ananthan Raghunathan
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Citeret af
Citeret af
Thermal stability of gold nanorods for high-temperature plasmonic sensing
NA Joy, BK Janiszewski, S Novak, TW Johnson, SH Oh, A Raghunathan, ...
The Journal of Physical Chemistry C 117 (22), 11718-11724, 2013
Best focus shift mechanism for thick masks
M Burkhardt, A Raghunathan
Extreme Ultraviolet (EUV) Lithography VI 9422, 276-288, 2015
Revisit pattern collapse for 14nm node and beyond
K Yoshimoto, C Higgins, A Raghunathan, JG Hartley, DL Goldfarb, H Kato, ...
Advances in Resist Materials and Processing Technology XXVIII 7972, 181-192, 2011
Implementation of assist features in EUV lithography
F Jiang, M Burkhardt, A Raghunathan, A Torres, R Gupta, J Word
Extreme Ultraviolet (EUV) Lithography VI 9422, 246-255, 2015
Operation and performance of the CNSE Vistec VB300 electron beam lithography system
JG Hartley, TR Groves, R Bonam, A Raghunathan, J Ruan, A McClelland, ...
Alternative Lithographic Technologies II 7637, 447-456, 2010
Reduction of systematic defects with machine learning from design to fab
Y Ma, L Hong, J Word, F Jiang, V Liubich, L Cao, S Jayaram, D Kwak, ...
Advanced Etch Technology for Nanopatterning IX 11329, 12-25, 2020
Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?
K Lai, CC Liu, H Tsai, Y Xu, C Chi, A Raghunathan, P Dhagat, L Hu, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (1), 013502, 2017
13nm gate Intentional Defect Array (IDA) wafer patterning by e-beam lithography for defect metrology evaluation
A Raghunathan, S Bennett, HO Stamper, JG Hartley, A Arceo, M Johnson, ...
Microelectronic engineering 88 (8), 2729-2731, 2011
Modeling metrology for calibration of OPC models
CA Mack, A Raghunathan, J Sturtevant, Y Deng, C Zuniga, K Adam
Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016
Influence of secondary electrons in high-energy electron beam lithography
A Raghunathan, JG Hartley
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
Impact of frequent particle removal on EUV mask lifetime
O Wood, E Gallagher, L Kindt, M Barrett, H Kato, U Okoroanyanwu, ...
International EUVL Symposium 19, 2010
New method of detection and classification of yield-impacting EUV mask defects
I Graur, D Vengertsev, A Raghunathan, I Stobert, J Rankin
Photomask Technology 2015 9635, 114-120, 2015
Method and recording medium of reducing chemoepitaxy directed self-assembled defects
MA Guillorn, K Lai, C Liu, A Raghunathan, H Tsai
US Patent 9,852,260, 2017
Stable and reliable FinFET SRAM with improved beta ratio
RC Wong, L Zhuang, A Raghunathan
US Patent 9,799,660, 2017
Enabling full field physics based OPC via dynamic model generation
M Lam, C Clifford, A Raghunathan, G Fenger, K Adam
Extreme Ultraviolet (EUV) Lithography VIII 10143, 222-231, 2017
Edge placement errors in EUV from aberration variation
A Raghunathan, G Fenger, M Lam, C Clifford, K Adam, J Sturtevant
Photomask Technology 2017 10451, 221-229, 2017
Optical proximity correction for anamorphic extreme ultraviolet lithography
C Clifford, M Lam, A Raghunathan, F Jiang, G Fenger, K Adam
Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (4), 041004, 2017
Enabling full-field physics-based optical proximity correction via dynamic model generation
M Lam, C Clifford, A Raghunathan, G Fenger, K Adam
Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (3), 033502, 2017
Modeling and parameter tuning for templated directed self-assembly
B Meliorisz, T Mülders, HJ Stock, S Marokkey, W Demmerle, K Lai, ...
Alternative Lithographic Technologies VIII 9777, 179-185, 2016
Impact of aberrations in EUV lithography: metal to via edge placement control
L Yin, A Raghunathan, G Fenger, S Shang, N Lafferty, J Sturtevant
Extreme Ultraviolet (EUV) Lithography IX 10583, 186-195, 2018
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