| Thermal stability of gold nanorods for high-temperature plasmonic sensing NA Joy, BK Janiszewski, S Novak, TW Johnson, SH Oh, A Raghunathan, ... The Journal of Physical Chemistry C 117 (22), 11718-11724, 2013 | 61 | 2013 |
| Best focus shift mechanism for thick masks M Burkhardt, A Raghunathan Extreme Ultraviolet (EUV) Lithography VI 9422, 276-288, 2015 | 33 | 2015 |
| Revisit pattern collapse for 14nm node and beyond K Yoshimoto, C Higgins, A Raghunathan, JG Hartley, DL Goldfarb, H Kato, ... Advances in Resist Materials and Processing Technology XXVIII 7972, 181-192, 2011 | 29 | 2011 |
| Implementation of assist features in EUV lithography F Jiang, M Burkhardt, A Raghunathan, A Torres, R Gupta, J Word Extreme Ultraviolet (EUV) Lithography VI 9422, 246-255, 2015 | 13 | 2015 |
| Reduction of systematic defects with machine learning from design to fab Y Ma, L Hong, J Word, F Jiang, V Liubich, L Cao, S Jayaram, D Kwak, ... Advanced Etch Technology for Nanopatterning IX 11329, 12-25, 2020 | 12 | 2020 |
| Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design? K Lai, CC Liu, H Tsai, Y Xu, C Chi, A Raghunathan, P Dhagat, L Hu, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (1), 013502-013502, 2017 | 11 | 2017 |
| 13nm gate Intentional Defect Array (IDA) wafer patterning by e-beam lithography for defect metrology evaluation A Raghunathan, S Bennett, HO Stamper, JG Hartley, A Arceo, M Johnson, ... Microelectronic engineering 88 (8), 2729-2731, 2011 | 11 | 2011 |
| Operation and performance of the CNSE Vistec VB300 electron beam lithography system JG Hartley, TR Groves, R Bonam, A Raghunathan, J Ruan, A McClelland, ... Alternative Lithographic Technologies II 7637, 447-456, 2010 | 11 | 2010 |
| Semiconductor wafer inspection using care area group-specific threshold settings for detecting defects P Dhagat, A Raghunathan, V Sachan, DA Vengertsev US Patent 10,146,036, 2018 | 8 | 2018 |
| Modeling metrology for calibration of OPC models CA Mack, A Raghunathan, J Sturtevant, Y Deng, C Zuniga, K Adam Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016 | 8 | 2016 |
| Optical proximity correction for anamorphic extreme ultraviolet lithography C Clifford, M Lam, A Raghunathan, F Jiang, G Fenger, K Adam Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (4), 041004-041004, 2017 | 7 | 2017 |
| Influence of secondary electrons in high-energy electron beam lithography A Raghunathan, JG Hartley Journal of Vacuum Science & Technology B 31 (1), 2013 | 7 | 2013 |
| Metrology, Inspection, and Process Control for Microlithography XV CA Mack, A Raghunathan, J Sturtevant, Y Deng, C Zuniga, K Adam Santa Clara CA 4344, 377-384, 2001 | 7 | 2001 |
| Stable and reliable FinFET SRAM with improved beta ratio RC Wong, L Zhuang, A Raghunathan US Patent 9,799,660, 2017 | 6 | 2017 |
| New method of detection and classification of yield-impacting EUV mask defects I Graur, D Vengertsev, A Raghunathan, I Stobert, J Rankin Photomask Technology 2015 9635, 114-120, 2015 | 6 | 2015 |
| Impact of frequent particle removal on EUV mask lifetime O Wood, E Gallagher, L Kindt, M Barrett, H Kato, U Okoroanyanwu, ... International EUVL Symposium 19, 2010 | 6 | 2010 |
| Edge placement errors in EUV from aberration variation A Raghunathan, G Fenger, M Lam, C Clifford, K Adam, J Sturtevant Photomask Technology 2017 10451, 221-229, 2017 | 5 | 2017 |
| Enabling full field physics based OPC via dynamic model generation M Lam, C Clifford, A Raghunathan, G Fenger, K Adam Extreme Ultraviolet (EUV) Lithography VIII 10143, 222-231, 2017 | 5 | 2017 |
| Method and recording medium of reducing chemoepitaxy directed self-assembled defects MA Guillorn, K Lai, C Liu, A Raghunathan, H Tsai US Patent 9,852,260, 2017 | 4 | 2017 |
| Enabling full-field physics-based optical proximity correction via dynamic model generation M Lam, C Clifford, A Raghunathan, G Fenger, K Adam Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (3), 033502-033502, 2017 | 3 | 2017 |
