| Power amplifiers and transmitters for RF and microwave FH Raab, P Asbeck, S Cripps, PB Kenington, ZB Popovic, N Pothecary, ... IEEE transactions on Microwave Theory and Techniques 50 (3), 814-826, 2002 | 1713 | 2002 |
| High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications G Hanington, PF Chen, PM Asbeck, LE Larson IEEE transactions on microwave theory and techniques 47 (8), 1471-1476, 1999 | 506 | 1999 |
| An extended Doherty amplifier with high efficiency over a wide power range M Iwamoto, A Williams, PF Chen, AG Metzger, LE Larson, PM Asbeck IEEE Transactions on Microwave Theory and Techniques 49 (12), 2472-2479, 2001 | 503 | 2001 |
| IIA-1 Self-aligned AlGaAs/InGaAs/GaAs Collector-up Heterojunction Bipolar Transistors for Microwave Applications MC Chang, NH Sheng, PM Asbeck, GJ Sullivan, KC Wang, RJ Anderson, ... IEEE Transactions on Electron Devices 36 (11), 1989 | 492 | 1989 |
| Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors ET Yu, GJ Sullivan, PM Asbeck, CD Wang, D Qiao, SS Lau Applied Physics Letters 71 (19), 2794-2796, 1997 | 489 | 1997 |
| RF and microwave power amplifier and transmitter technologies-Part 1 FH Raab, P Asbeck, S Cripps, PB Kenington, ZB Popovic, N Pothecary, ... high frequency electronics 2 (3), 22-36, 2003 | 475 | 2003 |
| Piezoelectric charge densities in AlGaN/GaN HFETs PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing Electronics letters 33 (14), 1230-1231, 1997 | 429 | 1997 |
| Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications F Wang, AH Yang, DF Kimball, LE Larson, PM Asbeck IEEE Transactions on Microwave theory and techniques 53 (4), 1244-1255, 2005 | 416 | 2005 |
| An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11 g WLAN applications F Wang, DF Kimball, JD Popp, AH Yang, DY Lie, PM Asbeck, LE Larson IEEE Transactions on Microwave Theory and Techniques 54 (12), 4086-4099, 2006 | 386 | 2006 |
| High-efficiency envelope-tracking W-CDMA base-station amplifier using GaN HFETs DF Kimball, J Jeong, C Hsia, P Draxler, S Lanfranco, W Nagy, K Linthicum, ... IEEE Transactions on Microwave Theory and Techniques 54 (11), 3848-3856, 2006 | 383 | 2006 |
| Open-loop digital predistorter for RF power amplifiers using dynamic deviation reduction-based Volterra series A Zhu, PJ Draxler, JJ Yan, TJ Brazil, DF Kimball, PM Asbeck IEEE Transactions on microwave theory and techniques 56 (7), 1524-1534, 2008 | 342 | 2008 |
| Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures ET Yu, XZ Dang, PM Asbeck, SS Lau, GJ Sullivan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 332 | 1999 |
| Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures P Asbeck Journal of Applied Physics 48 (2), 820-822, 1977 | 319 | 1977 |
| Analysis and design of stacked-FET millimeter-wave power amplifiers HT Dabag, B Hanafi, F Golcuk, A Agah, JF Buckwalter, PM Asbeck IEEE Transactions on Microwave Theory and Techniques 61 (4), 1543-1556, 2013 | 291 | 2013 |
| GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application PM Asbeck, MCF Chang, JA Higgins, NH Sheng, GJ Sullivan, KC Wang IEEE Transactions on Electron Devices 36 (10), 2032-2042, 1989 | 283 | 1989 |
| A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier F Wang, DF Kimball, DY Lie, PM Asbeck, LE Larson IEEE Journal of Solid-State Circuits 42 (6), 1271-1281, 2007 | 278 | 2007 |
| A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS S Pornpromlikit, J Jeong, CD Presti, A Scuderi, PM Asbeck IEEE Transactions on Microwave Theory and Techniques 58 (1), 57-64, 2009 | 252 | 2009 |
| Salicidation process using NiSi and its device application F Deng, RA Johnson, PM Asbeck, SS Lau, WB Dubbelday, T Hsiao, ... Journal of applied physics 81 (12), 8047-8051, 1997 | 242 | 1997 |
| Transfer of patterned ion-cut silicon layers CH Yun, AB Wengrow, NW Cheung, Y Zheng, RJ Welty, ZF Guan, ... Applied Physics Letters 73 (19), 2772-2774, 1998 | 241 | 1998 |
| Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals EJ Kim, L Wang, PM Asbeck, KC Saraswat, PC McIntyre Applied Physics Letters 96 (1), 2010 | 228 | 2010 |
