| Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications J Qi, X Yang, X Li, K Tian, Z Mao, S Yang, W Song IEEE Transactions on Power Electronics 34 (9), 9105-9117, 2018 | 59 | 2018 |
| An improved 4H-SiC trench-gate MOSFET with low ON-resistance and switching loss K Tian, A Hallén, J Qi, S Ma, X Fei, A Zhang, W Liu IEEE Transactions on Electron Devices 66 (5), 2307-2313, 2019 | 41 | 2019 |
| Comprehensive characterization of the 4H-SiC planar and trench gate MOSFETs from cryogenic to high temperature K Tian, A Hallen, J Qi, M Nawaz, S Ma, M Wang, S Guo, K Elgammal, A Li, ... IEEE Transactions on Electron Devices 66 (10), 4279-4286, 2019 | 30 | 2019 |
| Dynamic performance of 4H-SiC power MOSFETs and Si IGBTs over wide temperature range J Qi, K Tian, Z Mao, S Yang, W Song, M Yang, A Zhang 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2712-2716, 2018 | 28 | 2018 |
| Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications J Qi, X Yang, X Li, W Chen, T Long, K Tian, X Hou, X Wang IEEE Transactions on Power Electronics 36 (6), 6954-6966, 2020 | 22 | 2020 |
| Comparative temperature dependent evaluation and analysis of 1.2-kV SiC power diodes for extreme temperature applications J Qi, X Yang, X Li, W Chen, K Tian, M Wang, S Guo, M Yang IEEE Transactions on Power Electronics 35 (12), 13384-13399, 2020 | 13 | 2020 |
| Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures K Tian, J Qi, Z Mao, S Yang, W Song, M Yang, A Zhang 2017 14th China International Forum on Solid State Lighting: International …, 2017 | 13 | 2017 |
| A Highly Efficient Annealing Process With Supercritical N2O at 120 °C for SiO2/4H–SiC Interface M Wang, M Yang, W Liu, J Qi, S Yang, C Han, L Geng, Y Hao IEEE Transactions on Electron Devices 68 (4), 1841-1846, 2021 | 8 | 2021 |
| Dynamic characterization of 1.2 kV SiC power MOSFET body diode at cryogenic and high temperatures J Qi, K Tian, Z Mao, S Yang, W Song, A Zhang 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 8 | 2018 |
| Analysis of 600 V/650 V SiC schottky diodes at extremely high temperatures X Wang, J Qi, M Yang, G Zhang CPSS Transactions on Power Electronics and Applications 5 (1), 11-17, 2020 | 5 | 2020 |
| Temperature dependence of 1.2 kV 4H-SiC schottky barrier diode for wide temperature applications J Qi, X Yang, X Li, K Tian, M Wang, S Guo, M Yang 2019 IEEE 10th International Symposium on Power Electronics for Distributed …, 2019 | 5 | 2019 |
| Avalanche capability characterization of 1.2 kV SiC power MOSFETs compared with 900V Si CoolMOS J Qi, X Yang, X Li, K Tian, M Wang, L Zhou, X Wang 2019 IEEE 10th International Symposium on Power Electronics for Distributed …, 2019 | 5 | 2019 |
| Mixed Analog–Digital (MAD) Converters for High Power Density DC–DC Conversions H Zhao, Y Shen, W Ying, J Qi, C Jiang, T Long IEEE Transactions on Power Electronics 35 (8), 7742-7748, 2020 | 4 | 2020 |
| An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions K Tian, JH Xia, JW Qi, SH Ma, F Yang, A Zhang Materials Science Forum 954, 157-162, 2019 | 3 | 2019 |
| An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge K Tian, JH Xia, JW Qi, SH Ma, F Yang, A Zhang Materials Science Forum 954, 151-156, 2019 | 2 | 2019 |
| Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures X Wang, J Qi, M Yang 2019 IEEE 10th International Symposium on Power Electronics for Distributed …, 2019 | 2 | 2019 |
| Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET Z Gu, M Yang, Y Yang, X Liu, M Gao, J Qi, W Liu, C Han, L Geng, Y Hao IEEE Transactions on Power Electronics, 2023 | | 2023 |
