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Preston T. Webster
Preston T. Webster
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Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Journal of Applied Physics 118 (24), 2015
1012015
Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ...
Journal of Applied Physics 119 (22), 2016
532016
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Applied Physics Letters 106 (6), 2015
482015
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ...
Applied Physics Letters 116 (18), 2020
422020
Invited Article: A test-facility for large-area microchannel plate detector assemblies using a pulsed sub-picosecond laser
B Adams, M Chollet, A Elagin, E Oberla, A Vostrikov, M Wetstein, R Obaid, ...
Review of Scientific Instruments 84 (6), 2013
402013
Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices
PT Webster, NA Riordan, C Gogineni, S Liu, J Lu, XH Zhao, DJ Smith, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
372014
Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction
AJ Shalindar, PT Webster, BJ Wilkens, TL Alford, SR Johnson
Journal of applied Physics 120 (14), 2016
302016
Investigation of MBE-grown InAs1− xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy
J Lu, PT Webster, S Liu, YH Zhang, SR Johnson, DJ Smith
Journal of Crystal Growth 425, 250-254, 2015
252015
Absorption edge characteristics of GaAs, GaSb, InAs, and InSb
ST Schaefer, S Gao, PT Webster, RR Kosireddy, SR Johnson
Journal of Applied Physics 127 (16), 2020
232020
Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy
PT Webster, AJ Shalindar, ST Schaefer, SR Johnson
Applied Physics Letters 111 (8), 2017
212017
A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy
H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ...
Journal of crystal growth 378, 145-149, 2013
202013
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ...
Journal of Applied Physics 129 (18), 2021
192021
Molecular beam epitaxy growth and optical properties of InAsSbBi
ST Schaefer, RR Kosireddy, PT Webster, SR Johnson
Journal of Applied Physics 126 (8), 2019
182019
Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors
RA Carrasco, J George, D Maestas, ZM Alsaad, D Garnham, CP Morath, ...
Journal of Applied Physics 130 (11), 2021
132021
Orbital equivalence of terrestrial radiation tolerance experiments
JV Logan, MP Short, PT Webster, CP Morath
IEEE Transactions on Nuclear Science 67 (11), 2382-2391, 2020
92020
Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications
LK Casias, CP Morath, EH Steenbergen, PT Webster, JK Kim, VM Cowan, ...
Infrared Physics & Technology 96, 184-191, 2019
92019
Systems-Level Characterization of Microchannel Plate Detector Assemblies, Using a Pulsed sub-Picosecond Laser
MJ Wetstein, B Adams, M Chollet, P Webster, Z Insepov, V Ivanov, ...
Physics Procedia 37, 748-756, 2012
92012
Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
RA Carrasco, CP Morath, JV Logan, KB Woller, PC Grant, H Orozco, ...
Applied Physics Letters 120 (3), 2022
82022
Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi
P Petluru, PC Grant, AJ Muhowski, IM Obermeier, MS Milosavljevic, ...
Applied Physics Letters 117 (6), 2020
72020
Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance
AT Newell, JV Logan, RA Carrasco, ZM Alsaad, CP Hains, JM Duran, ...
Applied Physics Letters 122 (17), 2023
62023
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