| Flash memory cells-an overview P Pavan, R Bez, P Olivo, E Zanoni Proceedings of the IEEE 85 (8), 1248-1271, 1997 | 1011 | 1997 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 814 | 2018 |
| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 699 | 2008 |
| Flash memories P Cappelletti, C Golla, P Olivo, E Zanoni Springer Science & Business Media, 2013 | 440 | 2013 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 429 | 2013 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 384 | 2004 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 345 | 2013 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 307 | 2009 |
| A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008 | 299 | 2008 |
| Richardson’s constant in inhomogeneous silicon carbide Schottky contacts F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni Journal of applied Physics 93 (11), 9137-9144, 2003 | 268 | 2003 |
| Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006 | 207 | 2006 |
| Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 204 | 2008 |
| Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017 | 175 | 2017 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 153 | 2013 |
| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011 | 151 | 2011 |
| Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008 | 150 | 2008 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 114508, 2009 | 148 | 2009 |
| Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014 | 140 | 2014 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 033505, 2012 | 139 | 2012 |
| A fully electronic sensor for the measurement of cDNA hybridization kinetics L Bandiera, G Cellere, S Cagnin, A De Toni, E Zanoni, G Lanfranchi, ... Biosensors and Bioelectronics 22 (9-10), 2108-2114, 2007 | 139 | 2007 |
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information EngineeringBekræftet mail på dei.unipd.it
