Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020 | 314 | 2020 |
Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 171 | 2018 |
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ... Microelectronics Reliability 87, 286-320, 2018 | 125 | 2018 |
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser IEEE Electron Device Letters 37 (1), 84-87, 2015 | 83 | 2015 |
treatment of silicon-hydrogen bond rupture at interfaces M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser Physical Review B 100 (19), 195302, 2019 | 41 | 2019 |
Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017 | 34 | 2017 |
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017 | 31 | 2017 |
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ... IEEE Transactions on Electron Devices 66 (1), 232-240, 2018 | 30 | 2018 |
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ... IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020 | 25 | 2020 |
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ... IEEE Transactions on Electron Devices 66 (1), 241-248, 2018 | 23 | 2018 |
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ... Solid-State Electronics 115, 185-191, 2016 | 17 | 2016 |
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017 | 15 | 2017 |
Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ... Microelectronics Reliability 139, 114801, 2022 | 14 | 2022 |
Applicability of Shockley–Read–Hall theory for interface states B Ruch, M Jech, G Pobegen, T Grasser IEEE Transactions on Electron Devices 68 (4), 2092-2097, 2021 | 14 | 2021 |
A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 13 | 2020 |
First–principles parameter–free modeling of n–and p–FET hot–carrier degradation M Jech, S Tyaginov, B Kaczer, J Franco, D Jabs, C Jungemann, M Waltl, ... 2019 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2019 | 12 | 2019 |
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices B Kaczer, J Franco, S Tyaginov, M Jech, G Rzepa, T Grasser, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 12 | 2017 |
Bi-modal variability of nFinFET characteristics during hot-carrier stress: A modeling approach A Makarov, B Kaczer, A Chasin, M Vandemaele, E Bury, M Jech, A Grill, ... IEEE Electron Device Letters 40 (10), 1579-1582, 2019 | 11 | 2019 |
Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices M Jech, AM El-Sayed, S Tyaginov, D Waldhör, F Bouakline, P Saalfrank, ... Physical Review Applied 16 (1), 014026, 2021 | 10 | 2021 |
Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs S Tyaginov, AM El-Sayed, A Makarov, A Chasin, H Arimura, ... 2019 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2019 | 9 | 2019 |