Bernd Beschoten

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Christoph StampferRWTH AachenVerificeret mail på physik.rwth-aachen.de
Kenji WatanabeNational Institute for Materials ScienceVerificeret mail på nims.go.jp
T.TaniguchiNational Institute for Materials ScienceVerificeret mail på nims.go.jp
Luca BanszerusNiels Bohr Institute, University of CopenhagenVerificeret mail på rwth-aachen.de
Michael SchmitzII. Institute of Physics A, RWTH Aachen UniversityVerificeret mail på rwth-aachen.de
Ulrich NowakProfessor, University of KonstanzVerificeret mail på uni-konstanz.de
Klaus D. UsadelProfessor, Theoretische Physik, Universität Duisburg-EssenVerificeret mail på thp.uni-due.de
Hideo OhnoTohoku UniversityVerificeret mail på riec.tohoku.ac.jp
Mihail Ion LepsaSenior Scientist, Forschungszentrum Jülich GmbH, GermanyVerificeret mail på fz-juelich.de
Sven ReichardtUniversity of LuxembourgVerificeret mail på uni.lu
Paul A. CrowellUniversity of MinnesotaVerificeret mail på umn.edu
Thomas SchäpersProfessor in Physics, Forschungszentrum JülichVerificeret mail på fz-juelich.de
Christoph NeumannVerificeret mail på rwth-aachen.de
Barbaros OezyilmazProfessor of Physics, National University of SingaporeVerificeret mail på nus.edu.sg
Lars SchreiberVerificeret mail på physik.rwth-aachen.de
Alexander EppingII. Institute of Physics A, RWTH Aachen UniversityVerificeret mail på physik.rwth-aachen.de
Francesco MauriSapienza Università di RomaVerificeret mail på uniroma1.it
Slava V RotkinPenn State UniversityVerificeret mail på psu.edu
Jens SonntagII. Institute of Physics A, RWTH Aachen UniversityVerificeret mail på physik.rwth-aachen.de
Ahmet AvsarAssistant Professor, National University of SingaporeVerificeret mail på nus.edu.sg

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Bernd Beschoten

RWTH Aachen University

Verificeret mail på physik.rwth-aachen.de - Startside

spintronics graphene dichalcogenides 2D materials nanoelectronics


Titel Sortér efter henvisninger Sortér efter årstal Sortér efter titel	Citeret af Citeret af	År
Electrical spin injection in a ferromagnetic semiconductor heterostructure Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom Nature 402 (6763), 790-792, 1999	3210	1999
Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ... Science Advances 1 (6), e1500222, 2015	808	2015
Domain state model for exchange bias. I. Theory U Nowak, KD Usadel, J Keller, P Miltényi, B Beschoten, G Güntherodt Physical Review B 66 (1), 014430, 2002	587	2002
Diluted antiferromagnets in exchange bias: Proof of the domain state model P Miltényi, M Gierlings, J Keller, B Beschoten, G Güntherodt, U Nowak, ... Physical Review Letters 84 (18), 4224, 2000	520	2000
Raman spectroscopy as probe of nanometer-scale strain variations in graphene C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ... Nature Communications 6, 8429, 2014	424	2014
Ballistic transport exceeding 28m in CVD grown graphene L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ... Nano Letters 16 (2), 1387–1391, 2015	361	2015
Magnetic circular dichroism studies of carrier-induced ferromagnetism in (GaMn)As B Beschoten, PA Crowell, I Malajovich, DD Awschalom, F Matsukura, ... Physical Review Letters 83 (15), 3073, 1999	361	1999
Domain state model for exchange bias. II. Experiments J Keller, P Miltényi, B Beschoten, G Güntherodt, U Nowak, KD Usadel Physical Review B 66 (1), 014431, 2002	324	2002
Observation of long spin-relaxation times in bilayer graphene at room temperature TY Yang, J Balakrishnan, F Volmer, A Avsar, M Jaiswal, J Samm, SR Ali, ... Physical Review Letters 107 (4), 047206, 2011	300	2011
Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ... Nano Letters 16 (6), 3533, 2016	252	2016
Graphene spintronics: the European Flagship perspective S Roche, J Åkerman, B Beschoten, JC Charlier, M Chshiev, SP Dash, ... 2D Materials 2 (3), 030202, 2015	252	2015
Spin coherence and dephasing in GaN B Beschoten, E Johnston-Halperin, DK Young, M Poggio, JE Grimaldi, ... Physical Review B 63 (12), 121202, 2001	248	2001
Origin of high-temperature ferromagnetism in (Ga, Mn) N layers grown on 4H–SiC (0001) by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, L Däweritz, KJ Friedland, KH Ploog, ... Applied Physics Letters 82 (13), 2077-2079, 2003	244	2003
Towards wafer scale fabrication of graphene based spin valve devices A Avsar, TY Yang, SK Bae, J Balakrishnan, F Volmer, M Jaiswal, Z Yi, ... Nano Letters 11 (6), 2363–2368, 2011	239	2011
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten Physical Review B 72 (24), 245203, 2005	176	2005
Nanosecond spin lifetimes in single-and few-layer graphene–hBN heterostructures at room temperature M Drögeler, F Volmer, M Wolter, B Terrés, K Watanabe, T Taniguchi, ... Nano Letters 14 (11), 6050-6055, 2014	172	2014
Scaling behavior at the insulator-metal transition in BiSr(CaR)CuO where R is a rare-earth element C Quitmann, D Andrich, C Jarchow, M Fleuster, B Beschoten, ... Physical Review B 46 (18), 11813, 1992	133	1992
Identifying suitable substrates for high-quality graphene-based heterostructures L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ... 2D Materials 4 (2), 025030, 2017	102	2017
Perpendicular exchange bias in antiferromagnetic-ferromagnetic nanostructures J Sort, B Dieny, M Fraune, C Koenig, F Lunnebach, B Beschoten, ... Applied Physics Letters 84 (18), 3696-3698, 2004	100	2004
Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices F Volmer, M Drögeler, E Maynicke, N Von Den Driesch, ML Boschen, ... Physical Review B 88 (16), 161405, 2013	96	2013

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