| Electron dynamics at surfaces R Haight Surface science reports 21 (8), 275-325, 1995 | 400 | 1995 |
| Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ... Applied Physics Letters 98 (25), 2011 | 335 | 2011 |
| Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4 T Gershon, YS Lee, P Antunez, R Mankad, S Singh, D Bishop, ... Advanced Energy Materials 6 (10), 1502468, 2016 | 298 | 2016 |
| Cd-free buffer layer materials on Cu2ZnSn (SxSe1− x) 4: Band alignments with ZnO, ZnS, and In2S3 DAR Barkhouse, R Haight, N Sakai, H Hiroi, H Sugimoto, DB Mitzi Applied Physics Letters 100 (19), 2012 | 250 | 2012 |
| Complex formation and growth at the Cr–and Cu–polyimide interface R Haight, RC White, BD Silverman, PS Ho Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4 …, 1988 | 238 | 1988 |
| Organic light emitting diodes having transparent cathode structures S Guha, RA Haight, JM Karasinski, RR Troutman US Patent 5,739,545, 1998 | 188 | 1998 |
| Solar-powering the Internet of Things R Haight, W Haensch, D Friedman Science 353 (6295), 124-125, 2016 | 179 | 2016 |
| Picosecond time-resolved photoemission study of the InP (110) surface R Haight, J Bokor, J Stark, RH Storz, RR Freeman, PH Bucksbaum Physical review letters 54 (12), 1302, 1985 | 151 | 1985 |
| Impact of nanoscale elemental distribution in high‐performance kesterite solar cells K Sardashti, R Haight, T Gokmen, W Wang, LY Chang, DB Mitzi, ... Advanced Energy Materials 5 (10), 1402180, 2015 | 148 | 2015 |
| Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material TK Todorov, S Singh, DM Bishop, O Gunawan, YS Lee, TS Gershon, ... Nature communications 8 (1), 682, 2017 | 135 | 2017 |
| Hybrid organic-inorganic semiconductor light emitting diodes NA Bojarczuk Jr, S Guha, RA Haight US Patent 5,898,185, 1999 | 130 | 1999 |
| Antibonding state on the Ge (111): As surface: spectroscopy and dynamics R Haight, DR Peale Physical review letters 70 (25), 3979, 1993 | 130 | 1993 |
| Optically transparent diffusion barrier and top electrode in organic light emitting diode structures RA Haight, RR Troutman US Patent 5,714,838, 1998 | 125 | 1998 |
| Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber T Gershon, K Sardashti, O Gunawan, R Mankad, S Singh, YS Lee, JA Ott, ... Advanced Energy Materials 6 (22), 1601182, 2016 | 124 | 2016 |
| Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam RA Haight, PP Longo, DP Morris, A Wagner US Patent 7,649,153, 2010 | 123 | 2010 |
| HYDROGEN ADSORPTION ON Si (110)-(7 multiplied by 7). RJ Culbertson, LC Feldman, PJ Silverman, R Haight Journal of vacuum science & technology 20 (3), 868-871, 1981 | 120 | 1981 |
| Atomic structure at the (111) Si‐SiO2 interface R Haight, LC Feldman Journal of Applied Physics 53 (7), 4884-4887, 1982 | 117 | 1982 |
| Removal of charged defects from metal oxide-gate stacks EA Cartier, MW Copel, S Guha, RA Haight, FR McFeely, V Narayanan US Patent 7,488,656, 2009 | 109 | 2009 |
| Electronic and elemental properties of the Cu2ZnSn (S, Se) 4 surface and grain boundaries R Haight, X Shao, W Wang, DB Mitzi Applied Physics Letters 104 (3), 2014 | 108 | 2014 |
| Role of oxygen vacancies in V/sub FB//V/sub t/stability of pFET metals on HfO/sub 2 E Cartier, FR McFeely, V Narayanan, P Jamison, BP Linder, M Copel, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 230-231, 2005 | 108 | 2005 |
Leonard FeldmanProfessor of Physics and Materials ScienceVerificeret mail på rutgers.edu
