| Relationship between threading dislocation and leakage current in 4H-SiC diodes H Fujiwara, H Naruoka, M Konishi, K Hamada, T Katsuno, T Ishikawa, ... Applied Physics Letters 100 (24), 2012 | 91 | 2012 |
| Vasodilating effects of human and rat calcitonin gene-related peptides in isolated porcine coronary arteries T Shoji, I Ishihara, T Ishikawa, A Saito, K Goto Naunyn-Schmiedeberg's archives of pharmacology 336, 438-444, 1987 | 76 | 1987 |
| High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process T Ishikawa, D Kodama, Y Matsui, M Hiratani, T Furusawa, D Hisamoto Digest. International Electron Devices Meeting,, 940-942, 2002 | 73 | 2002 |
| Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes H Fujiwara, H Naruoka, M Konishi, K Hamada, T Katsuno, T Ishikawa, ... Applied Physics Letters 101 (4), 2012 | 66 | 2012 |
| Silicon carbide semiconductor device S Miyahara, M Sugimoto, H Takaya, Y Watanabe, N Soejima, T Ishikawa US Patent 9,136,372, 2015 | 52 | 2015 |
| Single-atom coherent field electron emitters for practical application to electron microscopy: Buildup controllability, self-repairing function and demountable characteristic E Rokuta, T Itagaki, T Ishikawa, BL Cho, HS Kuo, TT Tsong, C Oshima Applied surface science 252 (10), 3686-3691, 2006 | 47 | 2006 |
| Highly efficient electron gun with a single-atom electron source T Ishikawa, T Urata, B Cho, E Rokuta, C Oshima, Y Terui, H Saito, ... Applied physics letters 90 (14), 2007 | 42 | 2007 |
| Semiconductor device comprising metal insulator metal (MIM) capacitor K Takeda, T Fujiwara, T Imai, T Ishikawa, T Mine, M Miura US Patent 7,582,901, 2009 | 40 | 2009 |
| Silicon carbide semiconductor device and manufacturing method of the same T Mimura, S Miyahara, H Takaya, M Sugimoto, N Soejima, T Ishikawa, ... US Patent 8,575,689, 2013 | 33 | 2013 |
| Field emission spectra of single-atom tips with thermodynamically stable structures E Rokuta, HS Kuo, T Itagaki, K Nomura, T Ishikawa, BL Cho, IS Hwang, ... Surface science 602 (14), 2508-2512, 2008 | 32 | 2008 |
| Large negative anisotropic magnetoresistance in Co2MnGa Heusler alloy epitaxial thin films T Sato, S Kokado, S Kosaka, T Ishikawa, T Ogawa, M Tsunoda Applied Physics Letters 113 (11), 2018 | 28 | 2018 |
| Silicon carbide semiconductor device and method of manufacturing the same N Suzuki, H Matsuki, M Sugimoto, H Takaya, J Morimoto, T Ishikawa, ... US Patent 8,618,555, 2013 | 28 | 2013 |
| Semiconductor device including cell region and peripheral region having high breakdown voltage structure K Yamamoto, N Suzuki, H Takaya, M Sugimoto, J Morimoto, N Soejima, ... US Patent 8,492,867, 2013 | 25 | 2013 |
| Positive inotropic effects and receptors of calcitonin gene-related peptide (CGRP) in porcine ventricular muscles T Miyauchi, Y Sano, O Hiroshima, T Yuzuriha, Y Sugishita, T Ishikawa, ... Biochemical and biophysical research communications 155 (1), 289-294, 1988 | 25 | 1988 |
| Silicon carbide semiconductor device and method for manufacturing the same K Yamamoto, M Noborio, H Matsuki, H Takaya, M Sugimoto, N Soejima, ... US Patent App. 13/994,855, 2014 | 23 | 2014 |
| Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement T Katsuno, T Manaka, T Ishikawa, H Ueda, T Uesugi, M Iwamoto Applied Physics Letters 104 (25), 2014 | 21 | 2014 |
| Self-standing graphene sheets prepared with chemical vapor deposition and chemical etching G Odahara, T Ishikawa, S Otani, C Oshima e-journal of surface science and nanotechnology 7, 837-840, 2009 | 21 | 2009 |
| Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface N Soejima, T Kimura, T Ishikawa, T Sugiyama Materials Science Forum 740, 723-726, 2013 | 19 | 2013 |
| Atomic-scale field emitter with self-repairable function and thermodynamically stable structure: FEM study on Pd-covered nanopyramids on W< 1 1 1> tips E Rokuta, T Itagaki, D Miura, T Moriyama, T Ishikawa, BL Cho, TY Fu, ... Applied surface science 251 (1-4), 205-209, 2005 | 19 | 2005 |
| Semiconductor device and method for manufacturing semiconductor device H Takaya, H Matsuki, N Suzuki, T Ishikawa US Patent 8,952,430, 2015 | 18 | 2015 |
