| Complete loss and thermal model of power semiconductors including device rating information K Ma, AS Bahman, S Beczkowski, F Blaabjerg IEEE Transactions on Power Electronics 30 (5), 2556-2569, 2014 | 152 | 2014 |
| Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs H Li, S Munk-Nielsen, X Wang, R Maheshwari, S Bęczkowski, ... IEEE Transactions on Power Electronics 31 (1), 621-634, 2015 | 147 | 2015 |
| Online Vce measurement method for wear-out monitoring of high power IGBT modules S Bęczkowski, P Ghimre, AR de Vega, S Munk-Nielsen, B Rannestad, ... 15th European Conference on Power Electronics and Applications (EPE2013), 2013 | 124 | 2013 |
| Improving power converter reliability: online monitoring of high-power IGBT modules P Ghimire, AR de Vega, S Beczkowski, B Rannestad, S Munk-Nielsen, ... IEEE Industrial Electronics Magazine 8 (3), 40-50, 2014 | 91 | 2014 |
| A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT P Ghimire, S Beczkowski, S Munk-Nielsen, B Rannestad, PB Thøgersen 15th European Conference on Power Electronics and Applications (EPE 2013), 2013 | 80 | 2013 |
| A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules H Li, S Munk-Nielsen, S Beczkowski, X Wang Proceedings of the Ieee Applied Power Electronics Conference (apec 2016), 2016 | 53 | 2016 |
| LED spectral and power characteristics under hybrid PWM/AM dimming strategy S Bęczkowski, S Munk-Nielsen Energy Conversion Congress and Exposition (ECCE), 2010 IEEE, 731-735, 2010 | 52 | 2010 |
| Short-Circuit Degradation of 10-kV 10-A SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ... IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017 | 46 | 2017 |
| A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices AB Jørgensen, S Beczkowski, C Uhrenfeldt, NH Petersen, S Jørgensen, ... Ieee Transactions on Power Electronics, 2018 | 38 | 2018 |
| Effects of auxiliary-source connections in multichip power module H Li, S Munk-Nielsen, X Wang, S Bęczkowski, SR Jones, X Dai IEEE Transactions on Power Electronics 32 (10), 7816-7823, 2016 | 31 | 2016 |
| Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs H Li, S Munk-Nielsen, C Pham, S Bęczkowski 2014 16th European Conference on Power Electronics and Applications, 1-8, 2014 | 30 | 2014 |
| Test setup for accelerated test of high power IGBT modules with online monitoring of V ce and V f voltage during converter operation AR de Vega, P Ghimire, KB Pedersen, I Trintis, S Beczckowski, ... 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 25 | 2014 |
| Short-circuit characterization of 10 kV 10A 4H-SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 974-978, 2016 | 24 | 2016 |
| Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM AB Jørgensen, N Christensen, DN Dalal, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 23 | 2017 |
| Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter DN Dalal, N Christensen, AB Jørgensen, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 22 | 2017 |
| Test setup for long term reliability investigation of Silicon Carbide MOSFETs N Baker, S Munk-Nielsen, S Bęczkowski 15th European Conference on Power Electronics and Applications (EPE2013), 2013 | 22 | 2013 |
| Common mode current mitigation for medium voltage half bridge SiC Modules N Christensen, AB Jørgensen, D Dalal, SD Sonderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 21 | 2017 |
| An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation P Ghimire, AR de Vega, S Beczkowski, S Munk-Nielsen, B Rannested, ... 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 21 | 2014 |
| Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients DN Dalal, N Christensen, AB Jørgensen, JK Jørgensen, S Bęczkowski, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 298-310, 2019 | 20 | 2019 |
| Method of controling illumination device based on current-voltage model S Beczkowski US Patent 9,521,721, 2016 | 19 | 2016 |
Stig Munk-NielsenAalborg University, Energy TechnologyVerified email at et.aau.dk
