| Complete loss and thermal model of power semiconductors including device rating information K Ma, AS Bahman, S Beczkowski, F Blaabjerg IEEE Transactions on Power Electronics 30 (5), 2556-2569, 2014 | 104 | 2014 |
| Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs H Li, S Munk-Nielsen, X Wang, R Maheshwari, S Bęczkowski, ... IEEE Transactions on Power Electronics 31 (1), 621-634, 2015 | 97 | 2015 |
| Online Vce measurement method for wear-out monitoring of high power IGBT modules S Bęczkowski, P Ghimre, AR de Vega, S Munk-Nielsen, B Rannestad, ... 15th European Conference on Power Electronics and Applications (EPE2013), 2013 | 90 | 2013 |
| Improving power converter reliability: online monitoring of high-power IGBT modules P Ghimire, AR de Vega, S Beczkowski, B Rannestad, S Munk-Nielsen, ... IEEE Industrial Electronics Magazine 8 (3), 40-50, 2014 | 71 | 2014 |
| A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT P Ghimire, S Beczkowski, S Munk-Nielsen, B Rannestad, PB Thøgersen 15th European Conference on Power Electronics and Applications (EPE 2013), 2013 | 60 | 2013 |
| LED spectral and power characteristics under hybrid PWM/AM dimming strategy S Bęczkowski, S Munk-Nielsen Energy Conversion Congress and Exposition (ECCE), 2010 IEEE, 731-735, 2010 | 46 | 2010 |
| A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules H Li, S Munk-Nielsen, S Beczkowski, X Wang Proceedings of the Ieee Applied Power Electronics Conference (apec 2016), 2016 | 29 | 2016 |
| Short-Circuit Degradation of 10-kV 10-A SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ... IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017 | 26 | 2017 |
| Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs H Li, S Munk-Nielsen, C Pham, S Bęczkowski 2014 16th European Conference on Power Electronics and Applications, 1-8, 2014 | 24 | 2014 |
| Test setup for accelerated test of high power IGBT modules with online monitoring of V ce and V f voltage during converter operation AR de Vega, P Ghimire, KB Pedersen, I Trintis, S Beczckowski, ... 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 22 | 2014 |
| Effects of auxiliary-source connections in multichip power module H Li, S Munk-Nielsen, X Wang, S Bęczkowski, SR Jones, X Dai IEEE Transactions on Power Electronics 32 (10), 7816-7823, 2016 | 20 | 2016 |
| Short-circuit characterization of 10 kV 10A 4H-SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 974-978, 2016 | 20 | 2016 |
| An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation P Ghimire, AR de Vega, S Beczkowski, S Munk-Nielsen, B Rannested, ... 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 18 | 2014 |
| Test setup for long term reliability investigation of Silicon Carbide MOSFETs N Baker, S Munk-Nielsen, S Bęczkowski 15th European Conference on Power Electronics and Applications (EPE2013), 2013 | 18 | 2013 |
| Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer H Li, S Beczkowski, S Munk-Nielsen, K Lu, Q Wu 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2527-2531, 2015 | 15 | 2015 |
| Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter DN Dalal, N Christensen, AB Jørgensen, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 12 | 2017 |
| Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM AB Jørgensen, N Christensen, DN Dalal, SD Sønderskov, S Bęczkowski, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 10 | 2017 |
| Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs S Bęczkowski, AB Jørgensen, H Li, C Uhrenfeldt, X Dai, S Munk-Nielsen 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 10 | 2017 |
| Method of controling illumination device based on current-voltage model S Beczkowski US Patent 9,521,721, 2016 | 10 | 2016 |
| Circuit mismatch and current coupling effect influence on paralleling SiC MOSFETs in multichip power modules H Li, S Beczkowski, S Munk-Nielsen, R Maheshwari, T Franke Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 10 | 2015 |
Stig Munk-NielsenAalborg University, Energy TechnologyVerified email at et.aau.dk
