| Flexible technologies for self-powered wearable health and environmental sensing V Misra, A Bozkurt, B Calhoun, T Jackson, JS Jur, J Lach, B Lee, J Muth, ... Proceedings of the IEEE 103 (4), 665-681, 2015 | 208 | 2015 |
| Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease J Dieffenderfer, H Goodell, S Mills, M McKnight, S Yao, F Lin, E Beppler, ... IEEE journal of biomedical and health informatics 20 (5), 1251-1264, 2016 | 206 | 2016 |
| Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications B Sarkar, B Lee, V Misra Semiconductor Science and Technology 30 (10), 105014, 2015 | 75 | 2015 |
| Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices N Ramanan, B Lee, V Misra IEEE Transactions on Electron Devices 62 (2), 546-553, 2015 | 58 | 2015 |
| Device modeling for understanding AlGaN/GaN HEMT gate-lag N Ramanan, B Lee, V Misra IEEE Transactions on Electron Devices 61 (6), 2012-2018, 2014 | 51 | 2014 |
| Atomic Layer Deposition of for AlGaN/GaN MOS-HFETs CJ Kirkpatrick, B Lee, R Suri, X Yang, V Misra IEEE electron device letters 33 (9), 1240-1242, 2012 | 51 | 2012 |
| Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications S Novak, B Lee, X Yang, V Misra Journal of The Electrochemical Society 157 (6), H589, 2010 | 44 | 2010 |
| Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation N Ramanan, B Lee, C Kirkpatrick, R Suri, V Misra Semiconductor science and technology 28 (7), 074004, 2013 | 42 | 2013 |
| Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics B Lee, C Kirkpatrick, X Yang, S Jayanti, R Suri, J Roberts, V Misra 2010 International Electron Devices Meeting, 20.6. 1-20.6. 4, 2010 | 36 | 2010 |
| Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric R Suri, B Lee, DJ Lichtenwalner, N Biswas, V Misra Applied Physics Letters 93 (19), 2008 | 34 | 2008 |
| Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 29 | 2021 |
| Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal X Yang, B Lee, V Misra IEEE Transactions on Electron Devices 63 (7), 2826-2830, 2016 | 29 | 2016 |
| Atomic layer deposition of SnO2 for selective room temperature low ppb level O3 sensing S Mills, M Lim, B Lee, V Misra ECS journal of solid state science and technology 4 (10), S3059, 2015 | 29 | 2015 |
| High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 X Yang, B Lee, V Misra IEEE Electron Device Letters 36 (4), 312-314, 2015 | 28 | 2015 |
| Threshold voltage stability comparison in AlGaN/GaN FLASH MOS‐HFETs utilizing charge trap or floating gate charge storage C Kirkpatrick, B Lee, YH Choi, A Huang, V Misra physica status solidi c 9 (3‐4), 864-867, 2012 | 21 | 2012 |
| Investigation of the Origin of Modulation by Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- Layer, and … B Lee, SR Novak, DJ Lichtenwalner, X Yang, V Misra IEEE transactions on electron devices 58 (9), 3106-3115, 2011 | 21 | 2011 |
| Impact of ALD gate dielectrics (SiO2, HfO2, and SiO2/HAH) on device electrical characteristics and reliability of AlGaN/GaN MOSHFET devices B Lee, C Kirkpatrick, YH Choi, X Yang, Y Wang, X Yang, A Huang, ... ECS Transactions 41 (3), 445, 2011 | 17 | 2011 |
| Normally‐off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application B Lee, C Kirkpatrick, Y Choi, X Yang, AQ Huang, V Misra physica status solidi c 9 (3‐4), 868-870, 2012 | 16 | 2012 |
| Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory N Ramanan, B Lee, V Misra Applied Physics Letters 106 (24), 2015 | 15 | 2015 |
| Influence of oxygen diffusion through capping layers of low work function metal gate electrodes B Chen, R Jha, H Lazar, N Biswas, J Lee, B Lee, L Wielunski, E Garfunkel, ... IEEE electron device letters 27 (4), 228-230, 2006 | 15 | 2006 |
