| Low ON-resistance SiC trench/planar MOSFET with reduced OFF-state oxide field and low gate charges J Wei, M Zhang, H Jiang, CH Cheng, KJ Chen IEEE Electron Device Letters 37 (11), 1458-1461, 2016 | 85 | 2016 |
| A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector H Jiang, B Zhang, W Chen, Z Li, C Liu, Z Rao, B Dong IEEE Electron device letters 33 (3), 417-419, 2012 | 80 | 2012 |
| Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations J Wei, M Zhang, H Jiang, H Wang, KJ Chen IEEE Transactions on Electron Devices 64 (6), 2592-2598, 2017 | 78 | 2017 |
| Elastic scattering and total reaction cross sections for the , , and C systems A Barioni, JC Zamora, V Guimaraes, B Paes, J Lubian, EF Aguilera, ... Physical Review C 84 (1), 014603, 2011 | 73 | 2011 |
| SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications H Jiang, J Wei, X Dai, C Zheng, M Ke, X Deng, Y Sharma, I Deviny, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 66 | 2017 |
| SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss H Jiang, J Wei, X Dai, M Ke, I Deviny, P Mawby IEEE electron device letters 37 (10), 1324-1327, 2016 | 63 | 2016 |
| Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss H Jiang, J Wei, X Dai, M Ke, C Zheng, I Deviny 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 56 | 2016 |
| Proposal of a GaN/SiC hybrid field-effect transistor for power switching applications J Wei, H Jiang, Q Jiang, KJ Chen IEEE Transactions on Electron Devices 63 (6), 2469-2473, 2016 | 56 | 2016 |
| Dynamic gate stress induced threshold voltage drift of silicon carbide MOSFET H Jiang, X Zhong, G Qiu, L Tang, X Qi, L Ran IEEE Electron Device Letters 41 (9), 1284-1287, 2020 | 48 | 2020 |
| Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance M Zhang, J Wei, X Zhou, H Jiang, B Li, KJ Chen IEEE Electron Device Letters 40 (1), 79-82, 2018 | 43 | 2018 |
| Bias temperature instability of silicon carbide power MOSFET under AC gate stresses X Zhong, H Jiang, G Qiu, L Tang, H Mao, C Xu, X Jiang, J Hu, X Qi, L Ran IEEE Transactions on Power Electronics 37 (2), 1998-2008, 2021 | 41 | 2021 |
| A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS K Mao, M Qiao, L Jiang, H Jiang, Z Li, W Chen, Z Li, B Zhang 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 41 | 2013 |
| Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode H Jiang, J Wei, B Zhang, W Chen, M Qiao, Z Li IEEE electron device letters 33 (12), 1684-1686, 2012 | 36 | 2012 |
| A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance M Zhang, J Wei, H Jiang, KJ Chen, CH Cheng IEEE Transactions on Device and Materials Reliability 17 (2), 432-437, 2017 | 32 | 2017 |
| A power module for grid inverter with in-built short-circuit fault current capability W Shao, R Wu, L Ran, H Jiang, PA Mawby, DJ Rogers, TC Green, ... IEEE Transactions on Power Electronics 35 (10), 10567-10579, 2020 | 31 | 2020 |
| Superjunction MOSFET with dual built-in Schottky diodes for fast reverse recovery: A numerical simulation study J Wei, M Zhang, H Jiang, X Zhou, B Li, KJ Chen IEEE Electron Device Letters 40 (7), 1155-1158, 2019 | 31 | 2019 |
| A physical explanation of threshold voltage drift of SiC MOSFET induced by gate switching H Jiang, X Qi, G Qiu, X Zhong, L Tang, H Mao, Z Wu, H Chen, L Ran IEEE Transactions on Power Electronics 37 (8), 8830-8834, 2022 | 21 | 2022 |
| Heat-flux-based condition monitoring of multichip power modules using a two-stage neural network B Hu, Z Hu, L Ran, C Ng, C Jia, P McKeever, PJ Tavner, C Zhang, H Jiang, ... IEEE Transactions on Power Electronics 36 (7), 7489-7500, 2020 | 17 | 2020 |
| Low turnoff loss reverse-conducting IGBT with double npn electron extraction paths H Jiang, B Zhang, W Chen, M Qiao, Z Li, C Liu, Z Rao, B Dong Electronics letters 48 (8), 457-458, 2012 | 17 | 2012 |
| Gate structure design of SiC trench IGBTs for injection-enhancement effect J Wei, M Zhang, H Jiang, B Li, KJ Chen IEEE Transactions on Electron Devices 66 (7), 3034-3039, 2019 | 16 | 2019 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
