Gadi Eisenstein
Gadi Eisenstein
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Cited by
Cited by
Tunable all optical delay via slow and fast light propagation in a Raman assisted fiber optical parametric amplifier: a route to all optical buffering
D Dahan, G Eisenstein
Optics Express 13 (16), 6234-6249, 2005
Optical time-division multiplexing for very high bit-rate transmission
RS Tucker, G Eisenstein, SK Korotky
Journal of lightwave technology 6 (11), 1737-1749, 1988
Tapered waveguide InGaAs/InGaAsP multiple quantum-well lasers
U Koren, TL Koch, G Eisenstein, MG Young, M Oron, CR Giles, BI Miller
Integrated Photonics Research, WD2, 1990
Femtosecond gain dynamics in InGaAsP optical amplifiers
KL Hall, J Mark, EP Ippen, G Eisenstein
Applied physics letters 56 (18), 1740-1742, 1990
Cutoff frequency of submillimeter Schottky-barrier diodes
KS Champlin, G Eisenstein
IEEE Transactions on Microwave Theory and Techniques 26 (1), 31-34, 1978
Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode
I Kaminow, G Eisenstein, L Stulz
IEEE Journal of Quantum Electronics 19 (4), 493-495, 1983
InP based lasers and optical amplifiers with wire-/dot-like active regions
JP Reithmaier, A Somers, S Deubert, R Schwertberger, W Kaiser, ...
Journal of Physics D: Applied Physics 38 (13), 2088, 2005
Chemically etched conical microlenses for coupling single-mode lasers into single-mode fibers
G Eisenstein, D Vitello
Applied Optics 21 (19), 3470-3474, 1982
40 GHz active mode-locking in a 1.5 mu m monolithic extended-cavity laser
RS Tucker, U Koren, G Raybon, CA Burrus, BI Miller, TL Koch, ...
Electronics letters 10 (25), 621-622, 1989
Optical intensity modulation to 40 GHz using a waveguide electro‐optic switch
SK Korotky, G Eisenstein, RS Tucker, JJ Veselka, G Raybon
Applied physics letters 50 (23), 1631-1633, 1987
Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers
U Koren, TL Koch, G Eisenstein, BI MILLER, RH Bosworth
Conference on Lasers and Electro-Optics, TUD2, 1989
Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation
V Mikhelashvili, G Eisenstein
Journal of Applied Physics 89 (6), 3256-3269, 2001
Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator
U Koren, BI Miller, TL Koch, G Eisenstein, RS Tucker, I Bar‐Joseph, ...
Applied physics letters 51 (15), 1132-1134, 1987
On the nature of quantum dash structures
H Dery, E Benisty, A Epstein, R Alizon, V Mikhelashvili, G Eisenstein, ...
Journal of applied physics 95 (11), 6103-6111, 2004
Theoretical and experimental study of high-speed small-signal cross-gain modulation of quantum-dot semiconductor optical amplifiers
J Kim, M Laemmlin, C Meuer, D Bimberg, G Eisenstein
IEEE Journal of Quantum Electronics 45 (3), 240-248, 2009
Structural and electrical properties of electron beam gun evaporated insulator thin films
V Mikhelashvili, G Eisenstein, F Edelman, R Brener, N Zakharov, ...
Journal of applied physics 95 (2), 613-620, 2004
Timing jitter in mode‐locked and gain‐switched InGaAsP injection lasers
AJ Taylor, JM Wiesenfeld, G Eisenstein, RS Tucker
Applied physics letters 49 (12), 681-683, 1986
Control of light by curved space in nanophotonic structures
R Bekenstein, Y Kabessa, Y Sharabi, O Tal, N Engheta, G Eisenstein, ...
Nature photonics 11 (10), 664-670, 2017
Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon
V Mikhelashvili, G Eisenstein, F Edelmann
Journal of Applied Physics 90 (10), 5447-5449, 2001
The modulation response of a semiconductor laser amplifier
J Mork, A Mecozzi, G Eisenstein
IEEE Journal of Selected Topics in Quantum Electronics 5 (3), 851-860, 1999
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