| A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg Microelectronics Reliability 76, 272-276, 2017 | 91 | 2017 |
| Mission-Profile-Based Lifetime Prediction for a SiC MOSFET Power Module using a Multi-Step Condition-Mapping Simulation Strategy L Ceccarelli, RM Kotecha, AS Bahman, F Iannuzzo, HA Mantooth IEEE Transactions on Power Electronics 34 (10), 9698-9708, 2019 | 75 | 2019 |
| Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs PD Reigosa, F Iannuzzo, L Ceccarelli Microelectronics Reliability 88, 577-583, 2018 | 47 | 2018 |
| Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence H Du, PD Reigosa, L Ceccarelli, F Iannuzzo IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 195-205, 2019 | 35 | 2019 |
| A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs L Ceccarelli, AS Bahman, F Iannuzzo, F Blaabjerg 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 966-973, 2017 | 33 | 2017 |
| Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter L Ceccarelli, H Luo, F Iannuzzo Microelectronics Reliability 88, 627-630, 2018 | 23 | 2018 |
| Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs L Ceccarelli, AS Bahman, F Iannuzzo Microelectronics Reliability 100, 113336, 2019 | 21 | 2019 |
| An improved physics-based LTSpice compact electro-thermal model for a SiC power MOSFET with experimental validation MM Hossain, L Ceccarelli, AU Rashid, RM Kotecha, HA Mantooth IECON 2018-44th Annual Conference of the IEEE Industrial Electronics Society …, 2018 | 21 | 2018 |
| Cost-effective prognostics of IGBT bond wires with consideration of temperature swing K Hu, Z Liu, H Du, L Ceccarelli, F Iannuzzo, F Blaabjerg, IA Tasiu IEEE Transactions on Power Electronics 35 (7), 6773-6784, 2019 | 19 | 2019 |
| PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation L Ceccarelli, F Iannuzzo, M Nawaz 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-8, 2016 | 19 | 2016 |
| Fast Electro-thermal simulation strategy for SiC MOSFETs based on power loss mapping L Ceccarelli, R Kotecha, F Iannuzzo, A Mantooth 2018 IEEE International Power Electronics and Application Conference and …, 2018 | 17 | 2018 |
| Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules H Du, PD Reigosa, F Iannuzzo, L Ceccarelli Microelectronics Reliability 88, 661-665, 2018 | 15 | 2018 |
| Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature PD Reigosa, F Iannuzzo, L Ceccarelli 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 15 | 2018 |
| Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions L Ceccarelli, PD Reigosa, AS Bahman, F Iannuzzo, F Blaabjerg IECON 2017-43rd Annual Conference of the IEEE Industrial Electronics Society …, 2017 | 13 | 2017 |
| Finite element modeling of IGBT modules to explore the correlation between electric parameters and damage in bond wires M Jiang, G Fu, L Ceccarelli, H Du, MB Fogsgaard, AS Bahman, Y Yang, ... 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 839-844, 2019 | 12 | 2019 |
| Impact of the case temperature on the reliability of SiC MOSFETs under repetitive short circuit tests H Du, PD Reigosa, F Iannuzzo, L Ceccarelli 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 332-337, 2019 | 12 | 2019 |
| Non-uniform temperature distribution implications on thermal analysis accuracy of Si IGBTs and SiC MOSFETs M Akbari, AS Bahman, PD Reigosa, L Ceccarelli, F Iannuzzo, M Tavakoli 2018 24rd International Workshop on Thermal Investigations of ICs and …, 2018 | 9 | 2018 |
| Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules H Du, L Ceccarelli, F Iannuzzo, PD Reigosa Microelectronics Reliability 100, 113373, 2019 | 4 | 2019 |
| Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method L Ceccarelli, R Wu, F Iannuzzo Microelectronics Reliability 100, 113423, 2019 | 4 | 2019 |
| Power electronics and drive systems M Rosu, P Zhou, D Lin, DM Ionel, M Popescu, F Blaabjerg, V Rallabandi, ... Wiley-IEEE Press, 2018 | 4 | 2018 |
Francesco IannuzzoFull professor, University of Aalborg, DenmarkVerified email at et.aau.dk
