Pini Shekhter
Pini Shekhter
Nanotechnology Center, Tel-Aviv University
Verified email at - Homepage
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Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0. 53Ga0. 47As
S Mehari, A Gavrilov, S Cohen, P Shekhter, M Eizenberg, D Ritter
Applied Physics Letters 101 (7), 2012
Epitaxial NiInGaAs formed by solid state reaction on In0. 53Ga0. 47As: Structural and chemical study
P Shekhter, S Mehari, D Ritter, M Eizenberg
Journal of Vacuum Science & Technology B 31 (3), 2013
Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface
R Winter, P Shekhter, K Tang, L Floreano, A Verdini, PC McIntyre, ...
ACS Applied Materials & Interfaces 8 (26), 16979-16984, 2016
Composition and crystallography dependence of the work function: experiment and calculations of Pt-Al alloys
L Kornblum, P Shekhter, Y Slovatizky, Y Amouyal, M Eizenberg
Physical Review B 86 (12), 125305, 2012
Effect of H on interface properties of Al2O3/In0. 53Ga0. 47As
Z Liu, S Cui, P Shekhter, X Sun, L Kornblum, J Yang, M Eizenberg, ...
Applied Physics Letters 99 (22), 2011
Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon
D Schwendt, HJ Osten, P Shekhter, M Eizenberg
Applied Physics Letters 100 (23), 2012
Atmospheric-Pressure Conversion of CO2 to Cyclic Carbonates over Constrained Dinuclear Iron Catalysts
S Pappuru, D Shpasser, R Carmieli, P Shekhter, FC Jentoft, OM Gazit
ACS omega 7 (28), 24656-24661, 2022
Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire
A Cohen, PK Mohapatra, S Hettler, A Patsha, K Narayanachari, ...
ACS nano 17 (6), 5399-5411, 2023
Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
S Fadida, P Shekhter, D Cvetko, L Floreano, A Verdini, L Nyns, ...
Journal of Applied Physics 116 (16), 2014
The asymmetric band structure and electrical behavior of the GdScO3/GaN system
S Iacopetti, P Shekhter, R Winter, TCU Tromm, J Schubert, M Eizenberg
Journal of applied physics 121 (20), 2017
Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
F Palumbo, P Shekhter, K Cohen Weinfeld, M Eizenberg
Applied Physics Letters 107 (12), 2015
Three-dimensional monolithically self-grown metal oxide highly dense nanonetworks as free-standing high-capacity anodes for lithium-ion batteries
A Cohen, N Harpak, Y Juhl, P Shekhter, S Remennik, F Patolsky
ACS Applied Materials & Interfaces 14 (25), 28911-28923, 2022
The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric
P Shekhter, AR Chaudhuri, A Laha, S Yehezkel, A Shriki, HJ Osten, ...
Applied Physics Letters 105 (26), 2014
Elastic and inelastic mean free paths for scattering of fast electrons in thin-film oxides
A Basha, G Levi, T Amrani, Y Li, G Ankonina, P Shekhter, L Kornblum, ...
Ultramicroscopy 240, 113570, 2022
Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3
P Shekhter, D Schwendt, Y Amouyal, TF Wietler, HJ Osten, M Eizenberg
Journal of Applied Physics 120 (1), 2016
Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
F Palumbo, P Shekhter, M Eizenberg
Solid-state electronics 93, 56-60, 2014
Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0. 53Ga0. 47As interface
P Shekhter, L Kornblum, Z Liu, S Cui, TP Ma, M Eizenberg
Applied Physics Letters 99 (23), 2011
Enhancing Performance of Anode-Free Li-Metal Batteries by Addition of Ceramic Nanoparticles: Part I.
T Mukra, R Marrache, P Shekhter, E Peled
Journal of The Electrochemical Society 168 (9), 090541, 2021
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
P Shekhter, F Palumbo, K Cohen Weinfeld, M Eizenberg
Applied Physics Letters 105 (10), 2014
Carbon‐Nitride Popcorn—A Novel Catalyst Prepared by Self‐Propagating Combustion of Nitrogen‐Rich Triazenes
J Ma, J Das, J Zhang, J Cheng, S Sorcar, BA Rosen, P Shekhter, ...
Small 19 (12), 2205994, 2023
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