Follow
Zlatko Sitar
Zlatko Sitar
Kobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina State
Verified email at ncsu.edu
Title
Cited by
Cited by
Year
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
11332018
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
5051989
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
3612020
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
2831988
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
2062011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 2012
1842012
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 2963, 2013
1772013
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1692011
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 2015
1672015
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1672009
Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy
Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990
1631990
Seeded growth of AlN bulk single crystals by sublimation
R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
1612002
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 2010
1562010
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar
Journal of Crystal Growth 438, 81-89, 2016
1532016
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1512012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1492012
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar
Journal of Applied Physics 104 (1), 2008
1482008
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ...
Applied Physics Express 6 (9), 092103, 2013
1472013
The role of surface kinetics on composition and quality of AlGaN
I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ...
Journal of Crystal Growth 451, 65-71, 2016
1372016
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 2013
1342013
The system can't perform the operation now. Try again later.
Articles 1–20