Martin Geller
Martin Geller
Universität Duisburg-Essen, Fakultät für Physik und Cenide
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450 meV hole localization in GaSb/GaAs quantum dots
M Geller, C Kapteyn, L Müller-Kirsch, R Heitz, D Bimberg
Applied Physics Letters 82 (16), 2706-2708, 2003
extrapolated hole storage time in quantum dots
A Marent, M Geller, A Schliwa, D Feise, K Pötschke, D Bimberg, N Akçay, ...
Applied Physics Letters 91 (24), 242109, 2007
A write time of for quantum dot–based memory structures
M Geller, A Marent, T Nowozin, D Bimberg, N Akçay, N Öncan
Applied physics letters 92 (9), 092108, 2008
Phase-locked indistinguishable photons with synthesized waveforms from a solid-state source
C Matthiesen, M Geller, CHH Schulte, C Le Gall, J Hansom, Z Li, ...
Nature communications 4 (1), 1600, 2013
The QD-Flash: a quantum dot-based memory device
A Marent, T Nowozin, M Geller, D Bimberg
Semiconductor Science and Technology 26 (1), 014026, 2010
Tunneling emission from self-organized In (Ga) As∕ GaAs quantum dots observed via time-resolved capacitance measurements
M Geller, E Stock, C Kapteyn, RL Sellin, D Bimberg
Physical Review B 73 (20), 205331, 2006
Auger recombination in self-assembled quantum dots: quenching and broadening of the charged exciton transition
A Kurzmann, A Ludwig, AD Wieck, A Lorke, M Geller
Nano Letters 16 (5), 3367-3372, 2016
Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites
G Schierning, R Theissmann, N Stein, N Petermann, A Becker, ...
Journal of Applied Physics 110 (11), 113515, 2011
Electron-beam induced nano-etching of suspended graphene
B Sommer, J Sonntag, A Ganczarczyk, D Braam, G Prinz, A Lorke, ...
Scientific reports 5 (1), 7781, 2015
n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion
C Gutsche, A Lysov, D Braam, I Regolin, G Keller, ZA Li, M Geller, ...
Advanced Functional Materials 22 (5), 929-936, 2012
Radiation hardness of InGaAs/GaAs quantum dots
F Guffarth, R Heitz, M Geller, C Kapteyn, H Born, R Sellin, A Hoffmann, ...
Applied physics letters 82 (12), 1941-1943, 2003
Hole capture into self-organized InGaAs quantum dots
M Geller, A Marent, E Stock, D Bimberg, VI Zubkov, IS Shulgunova, ...
Applied Physics Letters 89 (23), 232105, 2006
Gas dependent hysteresis in MoS2 field effect transistors
F Urban, F Giubileo, A Grillo, L Iemmo, G Luongo, M Passacantando, ...
2D Materials 6 (4), 045049, 2019
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots
B Marquardt, M Geller, A Lorke, D Reuter, AD Wieck
Applied physics letters 95 (2), 022113, 2009
Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
T Nowozin, A Marent, M Geller, D Bimberg, N Akcay, N Öncan
Applied Physics Letters 94 (4), 042108, 2009
Optical detection of single-electron tunneling into a semiconductor quantum dot
A Kurzmann, P Stegmann, J Kerski, R Schott, A Ludwig, AD Wieck, ...
Physical Review Letters 122 (24), 247403, 2019
Carrier storage time of milliseconds at room temperature in self-organized quantum dots
A Marent, M Geller, D Bimberg, AP Vasi’ev, ES Semenova, AE Zhukov, ...
Applied physics letters 89 (7), 072103, 2006
Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots
B Marquardt, M Geller, B Baxevanis, D Pfannkuche, AD Wieck, D Reuter, ...
Nature Communications 2 (1), 209, 2011
Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
A Lysov, M Offer, C Gutsche, I Regolin, S Topaloglu, M Geller, W Prost, ...
Nanotechnology 22 (8), 085702, 2011
Towards an universal memory based on self-organized quantum dots
M Geller, A Marent, T Nowozin, D Feise, K Pötschke, N Akcay, N Öncan, ...
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 1811-1814, 2008
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