Simone Gerardin
Simone Gerardin
Dipartimento di Ingegneria dell'Informazione - Università di Padova
Verified email at dei.unipd.it
Title
Cited by
Cited by
Year
Present and future non-volatile memories for space
S Gerardin, A Paccagnella
IEEE Transactions on Nuclear Science 57 (6), 3016-3039, 2010
1662010
Radiation effects in flash memories
S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ...
IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013
1282013
Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs
F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin
IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015
1242015
Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
1232007
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility
M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ...
IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007
1032007
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source
C Andreani, A Pietropaolo, A Salsano, G Gorini, M Tardocchi, ...
Applied physics letters 92 (11), 114101, 2008
702008
TID sensitivity of NAND flash memory building blocks
M Bagatin, G Cellere, S Gerardin, A Paccagnella, A Visconti, S Beltrami
IEEE Transactions on Nuclear Science 56 (4), 1909-1913, 2009
682009
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
582017
Key contributions to the cross section of NAND flash memories irradiated with heavy ions
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ...
IEEE Transactions on Nuclear Science 55 (6), 3302-3308, 2008
582008
Ionizing radiation effects in electronics: from memories to imagers
M Bagatin, S Gerardin
CRC press, 2019
542019
Error instability in floating gate flash memories exposed to TID
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, M Bonanomi, ...
IEEE Transactions on Nuclear Science 56 (6), 3267-3273, 2009
472009
Impact of NBTI aging on the single-event upset of SRAM cells
M Bagatin, S Gerardin, A Paccagnella, F Faccio
IEEE Transactions on Nuclear Science 57 (6), 3245-3250, 2010
452010
Catastrophic failure in highly scaled commercial NAND flash memories
F Irom, DN Nguyen, M Bagatin, G Cellere, S Gerardin, A Paccagnella
IEEE Transactions on Nuclear Science 57 (1), 266-271, 2010
442010
Drain current decrease in MOSFETs after heavy ion irradiation
A Cester, S Gerardin, A Paccagnella, JR Schwank, G Vizkelethy, ...
IEEE transactions on nuclear science 51 (6), 3150-3157, 2004
442004
Heavy-ion induced threshold voltage tails in floating gate arrays
S Gerardin, M Bagatin, A Paccagnella, G Cellere, A Visconti, M Bonanomi, ...
IEEE Transactions on Nuclear Science 57 (6), 3199-3205, 2010
402010
Increase in the heavy-ion upset cross section of floating gate cells previously exposed to TID
M Bagatin, S Gerardin, A Paccagnella, G Cellere, A Visconti, M Bonanomi
IEEE Transactions on Nuclear Science 57 (6), 3407-3413, 2010
372010
Effectiveness of TMR-based techniques to mitigate alpha-induced SEU accumulation in commercial SRAM-based FPGAs
A Manuzzato, S Gerardin, A Paccagnella, L Sterpone, M Violante
2007 9th European Conference on Radiation and Its Effects on Components and …, 2007
362007
Impact of technology scaling on the heavy-ion upset cross section of multi-level floating gate cells
M Bagatin, S Gerardin, A Paccagnella, A Visconti
IEEE Transactions on Nuclear Science 58 (3), 969-974, 2011
342011
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ...
IEEE Transactions on Nuclear Science 57 (4), 1835-1841, 2010
342010
Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs
S Gerardin, M Bagatin, D Cornale, L Ding, S Mattiazzo, A Paccagnella, ...
IEEE Transactions on Nuclear Science 62 (6), 2398-2403, 2015
322015
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